公开(公告)号：JPH1133903A

公开(公告)日：1999-02-09

申请号：JP16029698

申请日：1998-06-09

Applicant: IBM

Inventor： MATTHEW KIRKPATRICK MILLER ,  CLIFFORD OWEN MORGAN ,  MATTHEW JEREMY RUTT ,  ERIC G WALTON ,  TERENCE MONTE WRIGHT

IPC: B24B37/24 ,  B24D3/34 ,  B24D13/12 ,  B24D13/14 ,  H01L21/304 ,  B24B37/04

Abstract: PROBLEM TO BE SOLVED: To supply a special fluid phase chemical to a surface of a board by controllably discharging the capsuled material freely between a chemical and a mechanical polishing processes through the operation of process parameter such as an applying force. SOLUTION: Plural types of capsuled chemical are assembled in a polishing medium such as a polishing pad 63. As plural micro capsuled chemical, a reactive agent micro capsule A, a surface active micro capsule B, a buffer micro capsule C is used. These micro capsules A, B, C are broken at the time of use of them in a polishing process, and an appropriate quantity of a desirable chemical is directly supplied to a surface of a board to be polished or a wafer. Discharge of the content of the micro capsules A, B, C is controlled by the operation of a polishing parameter. The polishing parameter includes an appropriate value of downward force, friction coefficient, platen rotating speed, and wafer and carrier rotating speed for a specified chemical and mechanical polishing process.

公开(公告)号：JP2000031102A

公开(公告)日：2000-01-28

申请号：JP11778999

申请日：1999-04-26

Applicant: IBM

Inventor： REEPIN RII ,  JAMES ALBERT GILHOOLEY ,  CLIFFORD OWEN MORGAN ,  CONN WAY ,  YU CHIENFAN ,  WILLIAM JOSEPH SALOWITZ

IPC: H01L21/302 ,  B24B37/013 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/66 ,  B24B37/04

Abstract: PROBLEM TO BE SOLVED: To detect end point for a target film lying on a stopper film by monitoring a reaction product during removal of the target film with a process that generates the chemical-reaction product from either the stopper film or the target film. SOLUTION: A target film is removed by a process that generates a chemical- reaction product selectively from a stopper film or from the target film. Namely, in chemical-mechanical polishing of a substrate 100 on which a target film 104 of an oxide (SiO2) lies on a stopper film 102 of a nitride (Si3N4) with slurry (mixture of micro-silica, water, and KOH), ammonium (NH3) is generated by a chemical reaction when the removal reaches the boundary 106. The level change of the ammonium in the slurry indicates that the removal reaches the underlying nitride film, and consequently, by monitoring the level of ammonium in the slurry, end point of the oxide film removal can be judged. When the end point is reached, the polishing is stopped.

公开(公告)号：JPH11330025A

公开(公告)日：1999-11-30

申请号：JP5812699

申请日：1999-03-05

Applicant: IBM

Inventor： CANAPERI DONALD F ,  JAGANNATHAN RANGARAJAN ,  MAHAADEVIIERU KURISHUNAN ,  CLIFFORD OWEN MORGAN ,  WRIGHT TERRANCE M

IPC: B24B37/00 ,  C09K13/00 ,  H01L21/304 ,  H01L21/3105

Abstract: PROBLEM TO BE SOLVED: To enable a first film to align when a second film on a plane by adding triethanolamine to a polishing slurry, which reacts with the first film and with the second film of a second material under a predetermined part of the first film, to increase the reactivity with respect to the first film and by exposing the second film by interrupting the polishing, when the first film is removed completely. SOLUTION: In order to control the polishing speed of the material of a composite material substrate, the substrate having a first film formed of a first material and a second film formed of a second material lying under a predetermined part of the first film is chemical-mechanical polished using a slurry reacting, with the first and second films so as to remove the most part of the first film. Then, adequate amount of triethanolamine is added to the slurry for increasing the reactivity of the slurry with the first film and chemical- mechanical polishing is carried out. Thereupon, the residual part of the first film is removed, and if the polishing is interrupted when the first film on the part under which second film lies is removed completely, a specified part is exposed so that the first film is aligned with the second film on a plane.