公开(公告)号：JP2001313296A

公开(公告)日：2001-11-09

申请号：JP2001081508

申请日：2001-03-21

Applicant: IBM

Inventor： MCGAHAY VINCENT J ,  ERNEST N LEVIN

IPC: H01L21/3205 ,  H01L21/283 ,  H01L21/316 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a barrier layer very effective for preventing diffusion of water and/or oxygen which is easily and reliably manufactured in an integrated circuit device including a copper structure. SOLUTION: In an integrated circuit, a diffusion barrier layer 18 made of a high density material for protecting a copper structure 40 from oxidation in the presence of oxygen or water being apt to bring about defects such as pin-holes is modified on site by oxidation of a material self-restrictively capable of making a protective oxide. This material is provided in contact with the high-density material preferably as a film 26. The protection for the copper structure 40 allows a high-conductivity copper to be used, combined with a known low-dielectric constant (low-k) material resistive to diffusion of oxygen and water.