公开(公告)号：GB2355342A

公开(公告)日：2001-04-18

申请号：GB0015036

申请日：2000-06-21

Applicant: IBM

Inventor： FARQUAR DONALD S ,  PAPATHOMAS KONSTANTINOS I ,  POLIKS MARK D

IPC: B32B15/082 ,  C08K3/00 ,  C08L27/12 ,  C08L101/00 ,  H01L23/14 ,  H05K1/02 ,  H05K1/03 ,  H05K3/38

Abstract: A semiconductor device and method (32) for fabricating the same comprises a conductive layer, a dielectric layer comprising a fluoropolymer matrix having inorganic particles distributed therein (34) and a thermosetting resin (36) for bonding the conductive layer to the fluoropolymer matrix (38). The device may take the form of a printed circuit board, an integrated circuit chip carrier, or the like.

公开(公告)号：GB2355342B

公开(公告)日：2003-06-18

申请号：GB0015036

申请日：2000-06-21

Applicant: IBM

Inventor： FARQUAR DONALD S ,  PAPATHOMAS KONSTANTINOS I ,  POLIKS MARK D

IPC: B32B15/082 ,  C08K3/00 ,  C08L27/12 ,  C08L101/00 ,  H01L23/14 ,  H05K1/02 ,  H05K1/03 ,  H05K3/38

Abstract: A semiconductor device having a thermoset-containing, dielectric material and methods for fabricating the same is provided. The device may take the form of a printed circuit board, an integrated circuit chip carrier, or the like. The dielectric material is a non-fibrillated, fluoropolymer matrix that has inorganic particles distributed therein and is impregnated with a thermoset material.