公开(公告)号：FR2349957A1

公开(公告)日：1977-11-25

申请号：FR7706018

申请日：1977-02-24

Applicant: IBM

Inventor： FENG BAI C ,  LECHATON JOHN S

IPC: H01L21/3205 ,  H01L21/28 ,  H01L21/306 ,  H01L21/768 ,  H01L23/522 ,  H01L21/90 ,  H01L23/52

Abstract: A method for forming feedthrough connections, or via studs, between levels of metallization atop semiconductor substrates. A first level conductive pattern is formed atop the substrate. A feedthrough pattern is then formed atop the first conductive pattern, the feedthrough pattern including one or more metal studs and a second, expendable material disposed on the studs. The formation of the feedthrough pattern is preferably accomplished by a lift-off process. The expendable material is removable by an etchant which does not substantially attack either the metal or the substrate. An insulator is deposited atop the substrate and the pattern by RF sputtering at a bias which is sufficiently high to cause substantial reemission of the insulator, thereby covering the exposed substrate surfaces and the expendable material but leaving the side surfaces of the material exposed. The expendable material is then etched with said etchant, thereby removing the second material and the portion of the insulator disposed thereon. A second conductive pattern may then be formed atop the insulator and selectively connected to the feedthroughs which thereby provide the interconnection between the first and second levels.

公开(公告)号：CA1053090A

公开(公告)日：1979-04-24

申请号：CA253537

申请日：1976-05-27

Applicant: IBM

Inventor： FENG BAI C

IPC: G03F7/40 ,  G03F1/00 ,  G03F1/08 ,  H01L21/00 ,  H01L21/027 ,  H01L23/29 ,  H05K3/06 ,  B05D3/04

Abstract: RESIST REFLOW METHOD FOR MAKING SUBMICRON PATTERNED RESIST MASKS The method for making patterned resist masks having minimum opening dimensions. The mask is prepared initially using standard photo or electron beam lithography techniques to yield the smallest aperture dimensions consistent with the state-of-the-art. Then, the resulting mask is placed within a chamber containing an atmosphere of resist solvent vapor. The vapor is absorbed by the patterned resist mask causing controlled resist reflow which uniformly reduces the dimensions of the resist openings by an amount determined by time, temperature, resist thickness, resist type and solvent used.