公开(公告)号：DE1564142A1

公开(公告)日：1970-01-08

申请号：DE1564142

申请日：1966-04-30

Applicant: IBM

Inventor： FERN R E ,  WEISER KURT

IPC: H01L33/00 ,  H01S5/30 ,  H01S5/32 ,  H01S3/18

Abstract: An electroluminescent source comprises a P, P-, P, (or N, N-, N) semiconductor structure across which a potential is applied to produce avalanche breakdown in the intermediate region, whereby the resulting electron-hole recombination produces radiation. In Fig. 1 a P-type gallium-arsenide crystal doped with manganese has its end regions 4, 6 diffusion doped with zinc which results in two high resistivity P-type regions R1, R2 being formed at the boundary of the zinc doped layers. Ohmic electrodes 8, 10 are provided by alloying or plating indium or similar metal. The sides of the body may be polished to provide an optical cavity to effect laser action and alternating current may be used for excitation.