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    Method of fabricating solid-state devices
    2.
    发明授权
    Method of fabricating solid-state devices 失效
    制造固态装置的方法

    公开(公告)号：US3642544A

    公开(公告)日：1972-02-15

    申请号：US3642544D

    申请日：1968-10-07

    Applicant: IBM

    Inventor： KEYES ROBERT W ,  WEISER KURT

    IPC: H01L21/00 ,  H01L33/00 ,  H01L7/36 ,  H01L7/44

    CPC classification number: H01L33/0029 ,  H01L21/00 ,  H01L33/00 ,  Y10S148/056 ,  Y10S148/065 ,  Y10S438/917

    Abstract: An electroluminescent diode with a negative resistance characteristic at room temperature is obtained by establishing a host semiconductor substrate of gallium arsenide crystal with a deep level acceptor impurity such as manganese as the dominant dopant thereby obtaining a P-type semiconductor. On a surface of the gallium arsenide there is epitaxially grown, e.g., by vapor epitaxy, a region of gallium arsenide doped with an N-type dopant, e.g., tellurium. The latter region provides injection of electrons, the minority carriers, into the high-resistivity region when suitable voltage is applied across the diode. On another surface of the host gallium arsenide substrate removed from the tellurium doped region, a shallow level impurity such as zinc is diffused therein to obtain a region dominated thereby. The diffusion produces a high-resistivity zone bounded by the zinc and manganese dominant regions. At room temperature, e.g., 20* C., and below, the diode shows a high-series resistance at voltages beyond approximately 1 volt. When a critical breakdown voltage is reached, a negative resistance is obtained in which the current goes up with decreasing voltage. The switching speed of the diode from low- to high-current operations is less than 10 nanoseconds for an overvoltage of the order of 1 volt.

    Abstract translation: 通过以诸如锰作为主要掺杂剂的深层受主杂质建立砷化镓晶体的主体半导体衬底，获得室温下具有负电阻特性的电致发光二极管，从而获得P型半导体。 在砷化镓的表面上，例如通过蒸气外延外延生长掺杂有N型掺杂剂例如碲的砷化镓的区域。 当在二极管上施加合适的电压时，后一区域提供电子（少数载流子）注入高电阻率区域。 在从碲掺杂区域去除的主体砷化镓衬底的另一个表面上，诸如锌的浅层杂质扩散到其中，从而获得由此控制的区域。 扩散产生由锌和锰主导区域界定的高电阻率区域。

    Electroluminescent device
    6.
    发明专利
    Electroluminescent device 未知

    公开(公告)号：GB1080627A

    公开(公告)日：1967-08-23

    申请号：GB4368164

    申请日：1964-10-27

    Applicant: IBM

    Inventor： DUMKE WILLIAM PAUL ,  LEVITT RALPH SIDNEY ,  WEISER KURT

    IPC: H01L21/00 ,  H01L31/153 ,  H01L33/00 ,  H05B33/14

    Abstract: A light-emitting device comprises an NPP zone structure in which the outer P region is doped with shallow level acceptors while the central zone contains deep level acceptors and is of higher resistivity than either outer zone. A typical device, Fig. 8, with a built-in injection luminescent diode is made by diffusing manganese, cobalt or chromium into a selenium, tellurium or silicon doped N-type gallium arsenide wafer. If one face of the wafer is not masked during the diffusion the P layer formed thereon is removed. The same result is more economically achieved by cutting the wafer in half. Zinc, cadmium or magnesium is then diffused into the wafer to a lesser depth to form P zones on both faces, the wafer diced and ohmic contacts made as shown to individual elements using tin on the N region and indium on the P zones. A reflective coating 56 directs light from diode 16-50 on to radiation sensitive element 12, 14, 16. Another embodiment is similar but lacks P region 50. In this case a separate radiation source is used and the device used as a light amplifier or, if the photons from the source are less energetic than those generated by the diode, as a quartum converter. The diode is made as described above except that the second P zone is removed or its formation avoided by masking, and may have a dichroic filter on its N surface to reflect back radiation generated within while admitting longer wavelength radiation from the source. In the Fig. 7 circuit, not shown, the incident radiation is chopped at a frequency less than that of the alternating voltage fed to the diode. A matrix of diodes may be used as an infra-red image converter or, if a gallium phosphide-arsenide alloy is used for the body to make infra-red images visible.

    7.
    发明专利
    未知

    公开(公告)号：DE1564142A1

    公开(公告)日：1970-01-08

    申请号：DE1564142

    申请日：1966-04-30

    Applicant: IBM

    Inventor： FERN R E ,  WEISER KURT

    IPC: H01L33/00 ,  H01S5/30 ,  H01S5/32 ,  H01S3/18

    Abstract: An electroluminescent source comprises a P, P-, P, (or N, N-, N) semiconductor structure across which a potential is applied to produce avalanche breakdown in the intermediate region, whereby the resulting electron-hole recombination produces radiation. In Fig. 1 a P-type gallium-arsenide crystal doped with manganese has its end regions 4, 6 diffusion doped with zinc which results in two high resistivity P-type regions R1, R2 being formed at the boundary of the zinc doped layers. Ohmic electrodes 8, 10 are provided by alloying or plating indium or similar metal. The sides of the body may be polished to provide an optical cavity to effect laser action and alternating current may be used for excitation.

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