公开(公告)号：JPS62262456A

公开(公告)日：1987-11-14

申请号：JP5703387

申请日：1987-03-13

Applicant: IBM

Inventor： FITZGERALD BRIAN F ,  NGUYEN KIMM YEN T ,  NGUYEN ESSEX JUNCTION VAN

IPC: H01L27/10 ,  G11C11/404 ,  H01L21/8242 ,  H01L27/108

公开(公告)号：CA1277031C

公开(公告)日：1990-11-27

申请号：CA534688

申请日：1987-04-14

Applicant: IBM

Inventor： FITZGERALD BRIAN F ,  NGUYEN KIM Y T ,  NGUYEN SON V

IPC: H01L27/10 ,  G11C11/404 ,  H01L21/8242 ,  H01L27/108 ,  G11C11/24 ,  G11C11/34

Abstract: HIGH DENSITY VERTICALLY STRUCTURED MEMORY A dynamic random access memory is provided wherein each cell has a storage capacitor and switching device and a bit/sense line or plate located along a sidewall of a trench formed in a semiconductor substrate. In a more particular structure of the cell, the trench width defines the length of the switching device, with the storage capacitor and a highly conductive bit/sense line being formed along opposite sidewalls of the trench. In an array of such cells, the highly conductive bit/sense line or plate interconnecting a large number of the cells of the array extends continuously from cell to cell within the trench at a sidewall thereof. Likewise, the storage capacitors of these many cells have a highly conductive common plate extending continuously within the trench at the opposite sidewall. BU-9-85-004

公开(公告)号：ES2025082B3

公开(公告)日：1992-03-16

申请号：ES87104940

申请日：1987-04-03

Applicant: IBM

Inventor： FITZGERALD BRIAN F ,  NGUYEN KIMM YEN T ,  NGUYEN VAN S

IPC: H01L27/10 ,  G11C11/404 ,  H01L21/8242 ,  H01L27/108

公开(公告)号：DE3772109D1

公开(公告)日：1991-09-19

申请号：DE3772109

申请日：1987-04-03

Applicant: IBM

Inventor： FITZGERALD BRIAN F ,  NGUYEN KIMM YEN T ,  NGUYEN ESSEX JUNCTION VAN

IPC: H01L27/10 ,  G11C11/404 ,  H01L21/8242 ,  H01L27/108 ,  G11C11/34