Pitch-based design of sub-resolution assist feature (sraf)
    1.
    发明专利
    Pitch-based design of sub-resolution assist feature (sraf) 有权
    分支辅助功能(SRAF)的基于PITCH的设计

    公开(公告)号:JP2004266269A

    公开(公告)日:2004-09-24

    申请号:JP2004020551

    申请日:2004-01-28

    Abstract: PROBLEM TO BE SOLVED: To provide a method to design a mask for integrated circuit (IC) design layout drawing in order to efficiently configure sub-resolution assist features (SRAFs) corresponding to an optimally structured annular illumination light source of a lithography projection system. SOLUTION: A critical pitch relative to an IC design is specified, and the optimal inner radial coordinate σ inner and the optimal outer radial coordinate σ outer of an annular illumination light source are determined so that an image projected through a mask is optimized throughout the pitch range in a design layout. A relation is given to determine the optimal inner radius and the optimal outer radius for the annular illumination light source. The number and positions of sub-resolution assist features (SRAFs) is added to the mask design so that the obtained pitch range almost corresponds to the critical pitch. This method to configure SRAFs so that an image has optimal characteristics such as a good contrast and a good focal depth takes a short time. COPYRIGHT: (C)2004,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种设计用于集成电路(IC)设计布局图的掩模的方法,以便有效地配置对应于最佳结构的光刻的环形照明光源的子分辨率辅助特征(SRAF) 投影系统

    解决方案:规定了相对于IC设计的临界间距,并且环形照明的最佳内径向坐标σ和最佳外径向坐标σ 确定光源,使得通过掩模投射的图像在设计布局中在整个间距范围内被优化。 给出了确定环形照明光源的最佳内半径和最佳外半径的关系。 将子分辨率辅助特征(SRAF)的数量和位置添加到掩模设计中,使得所获得的间距范围几乎对应于临界间距。 这种配置SRAF的方法使得图像具有最佳特征,例如良好的对比度和良好的聚焦深度需要很短的时间。 版权所有(C)2004,JPO&NCIPI

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