公开(公告)号：EP1634122A4

公开(公告)日：2009-02-11

申请号：EP04752670

申请日：2004-05-19

Applicant: IBM

Inventor： FONSECA CARLOS A ,  BUKOFSKY SCOTT J ,  LAI KAFAI

IPC: G03C5/00 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F7/705 ,  G03F7/70466 ,  G03F7/70625 ,  G03F7/70641

Abstract: A method of evaluating process effects of multiple exposure photolithographic processes by first determining a set of expected images for each exposure step or process of the multiple exposure process individually (SET1, SET2) and then obtaining a composite set of images (FINALSET) by sequentially perturbing images from a first or previous exposure step (SET1) by weighted images from the subsequent exposure step (SET2). Preferably, the expected images are determined by simulation in the form of normalized aerial images over a range of defocus for each exposure step, and the weighting factor used is the dose-ratio of the subsequent exposure dose to the prior step exposure dose. The resulting composite set of images may be used to evaluate multiple exposure processes, for example, to provide an estimate of yield for a given budget of dose and focus errors, or alternatively, to provide specifications for tool error budgets required to obtain a target yield.

公开(公告)号：EP2095280A4

公开(公告)日：2009-12-09

申请号：EP07844831

申请日：2007-11-02

Applicant: IBM

Inventor： LAI KAFAI ,  ROSENBLUTH ALAN E ,  GALLATIN GREGG M ,  MUKHERJEE MAHARAJ

IPC: G06F17/50

CPC classification number: G03F1/36

公开(公告)号：WO2010133422A3

公开(公告)日：2011-05-12

申请号：PCT/EP2010055412

申请日：2010-04-23

Applicant: IBM ,  IBM UK ,  CHENG JOY ,  NA YOUNG-HYE ,  LAI KAFAI ,  RETTNER CHARLES THOMAS ,  SANDERS DANIEL PAUL ,  LI WAI-KIN

Inventor： CHENG JOY ,  NA YOUNG-HYE ,  LAI KAFAI ,  RETTNER CHARLES THOMAS ,  SANDERS DANIEL PAUL ,  LI WAI-KIN

IPC: B81C1/00

CPC classification number: B81C1/00031 ,  B81C1/00404 ,  B81C2201/0149 ,  H01L21/0337 ,  H01L21/31144

Abstract: An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.

Abstract translation: 例如使用光刻法形成衬底中的开口，其中开口具有侧壁，其横截面由轮廓和凸形的部分给出。 例如，开口的横截面可以由重叠的圆形区域给出。 侧壁在各个点处相邻，在那里它们限定突起。 将包含嵌段共聚物的聚合物层施加在开口和基底上，并允许自组装。 在开口中形成离散的分离的区域，其被去除以形成孔，其可以被转移到下面的基底中。 这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。 分离这些孔的距离可以大于或小于如果嵌段共聚物（和任何添加剂）在没有任何侧壁的情况下自组装就会发生。

公开(公告)号：JP2007129222A

公开(公告)日：2007-05-24

申请号：JP2006294892

申请日：2006-10-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： LAI KAFAI ,  PFEIFFER DIRK ,  ROSENBLUTH ALAN E

IPC: H01L21/027

CPC classification number: G03F7/70216

Abstract: PROBLEM TO BE SOLVED: To provide a method and a system for exposing a resist layer with regions of photosensitivity to an image in a lithographic process using a high numerical aperture imaging tool. SOLUTION: There is employed a substrate having thereover a layer reflective to the imaging tool radiation and a portion of the radiation containing an aerial image passes through the resist layer, and reflects back to the resist layer. The reflected radiation forms an interference pattern in the resist layer of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity with respect to the reflective layer are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, to exclude lower contrast portions of the interference pattern in the resist thickness direction from the resist layer region of photosensitivity, and to improve contrast of the aerial image in the resist layer region of photosensitivity. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种方法和系统，用于使用高数值孔径成像工具在光刻工艺中将抗蚀剂层与对图像的光敏感区域进行曝光。 解决方案：采用具有反射成像工具辐射的层的衬底，并且包含空间图像的一部分辐射穿过抗蚀剂层，并反射回抗蚀剂层。 反射辐射通过抗蚀剂层厚度在投影空间图像的抗蚀剂层中形成干涉图案。 选择相对于反射层的光敏层的抗蚀剂层区域的厚度和位置，以便在干涉图形内包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，以排除干涉图案的较低对比度部分 在抗蚀剂厚度方向上从抗蚀剂层区域的感光度，并改善抗敏剂层区域中的空间图像的光敏性的对比度。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005129958A

公开(公告)日：2005-05-19

申请号：JP2004309629

申请日：2004-10-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GALLATIN GREGG M ,  GOFMAN EMANUEL ,  LAI KAFAI ,  LAVIN MARK A ,  MUKHERJEE MAHARAJ ,  RAMM DOV ,  ROSENBLUTH ALAN E ,  SHLAFMAN SHLOMO

IPC: H01L21/027 ,  G03F1/14 ,  G03F7/20 ,  G06K9/00 ,  H01L21/00

CPC classification number: G03F1/36

Abstract: PROBLEM TO BE SOLVED: To provide a method and a program storage device in which model base optical proximity collection is performed, by providing a region of interest (ROI) having interaction distance and tracing at least one polygon in the ROI.
SOLUTION: A cut line or a plurality of cut lines of sample points showing a set of apexes are formed within the ROI so as to be traversed at least one side edge of polygon. By determining an angular position, and a first part and a second part of the cut line in opposing side surfaces which intersect between the cut line and the side edge of the polygon, and then, based on the angular position and the first part and the second part of the cut line extending the original ROI over the interaction distance, new ROI is formed. By this form, various new ROI is formed in various different directions. Finally, optical proximity can be corrected.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种方法和程序存储装置，其中通过提供具有交互距离的感兴趣区域（ROI）和跟踪ROI中的至少一个多边形来执行模型基础光学邻近度收集。 解决方案：在ROI内形成切割线或多个示出点的切割线的切割线，以便遍历多边形的至少一个侧边缘。 通过确定角位置，以及在切割线和多边形的侧边之间相交的相对侧表面中的切割线的第一部分和第二部分，然后基于角位置和第一部分以及 切割线的第二部分通过交互距离延伸原始ROI，形成新的ROI。 通过这种形式，在各种不同的方向上形成各种新的ROI。 最后，可以校正光学接近度。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005128553A

公开(公告)日：2005-05-19

申请号：JP2004309697

申请日：2004-10-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GALLATIN GREGG M ,  GOFMAN EMANUEL ,  LAI KAFAI ,  MARK A RABIN ,  MUKHERJEE MAHARAJ ,  RAMM DOV ,  ROSENBLUTH ALAN E ,  SHLAFMAN SHLOMO

IPC: G03F1/08 ,  G03F1/14 ,  G03F7/20 ,  G06F17/50 ,  H01L21/027 ,  H01L21/82

CPC classification number: G03F1/36 ,  G03F1/68 ,  G06F17/5068

Abstract: PROBLEM TO BE SOLVED: To provide a method for performing model-based photolithography correction by partitioning a cell array layout having a plurality of polygons into a plurality of cells covering the layout, and to provide a program storage device.
SOLUTION: The layout is representative of a desired design data hierarchy. A density map is generated corresponding to interactions between the polygons and the plurality of cells, and then the densities within each cell are convolved. An interaction map is formed by using the convolved densities, followed by truncating the interaction map to form a map of truncated cells. Substantially identical groupings of the truncated cells are segregated respectively into differing ones of a plurality of buckets. Each bucket contains a single set of identical groupings of truncated cells. A hierarchal arrangement is generated using the buckets, and the desired design data hierarchy is performed by using the hierarchal arrangement to ultimately correct for photolithography.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种通过将具有多个多边形的单元阵列布局分割成覆盖布局的多个单元来执行基于模型的光刻校正的方法，并且提供程序存储装置。

解决方案：布局代表所需的设计数据层次结构。 生成对应于多边形与多个单元之间的相互作用的密度图，然后卷积每个单元内的密度。 通过使用卷积密度形成交互图，随后截断交互图以形成截断单元格的图。 截短的细胞的基本相同的分组分别分离成多个桶中的不同的桶。 每个桶包含一组相同的截断单元组。 使用桶来生成层级布置，并且通过使用层级布置来执行期望的设计数据层次结构以最终校正光刻。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：WO2008057996A3

公开(公告)日：2008-07-10

申请号：PCT/US2007083441

申请日：2007-11-02

Applicant: IBM ,  LAI KAFAI ,  ROSENBLUTH ALAN E ,  GALLATIN GREGG M ,  MUKHERJEE MAHARAJ

Inventor： LAI KAFAI ,  ROSENBLUTH ALAN E ,  GALLATIN GREGG M ,  MUKHERJEE MAHARAJ

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A fast method of verifying a lithographic mask design is provided wherein catastrophic errors (432) are identified by iteratively simulating and verifying images for the mask layout using progressively more accurate image models (411), including optical and resist models. Progressively accurate optical models include SOCS kernels that provide successively less influence. Corresponding resist models are constructed that may include only SOCS kernel terms corresponding to the optical model, or may include image trait terms of varying influence ranges. Errors associated with excessive light, such as bridging, side- lobe or SRAF printing errors, are preferably identified with bright field simulations, while errors associated with insufficient light, such as necking or line-end shortening overlay errors, are preferably identified with dark field simulations.

Abstract translation: 提供了验证光刻掩模设计的快速方法，其中通过使用包括光学和抗蚀剂模型的逐渐更准确的图像模型（411）迭代模拟和验证掩模布局的图像来识别灾难性错误（432）。 逐渐精确的光学模型包括提供连续影响较小的SOCS内核。 构建对应的抗蚀剂模型，其可以仅包括对应于光学模型的SOCS内核项，或者可以包括不同影响范围的图像特征项。 与过量光相关的错误，例如桥接，旁瓣或SRAF打印错误，优选地用明场模拟来识别，而与光线不足有关的错误例如颈缩或线端缩短覆盖错误优选地用暗场识别 模拟。

公开(公告)号：JP2005165282A

公开(公告)日：2005-06-23

申请号：JP2004309739

申请日：2004-10-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GALLATIN GREGG M ,  GOFMAN EMANUEL ,  LAI KAFAI ,  LAVIN MARK A ,  MUKHERJEE MAHARAJ ,  RAMM DOV ,  ROSENBLUTH ALAN E ,  SHLAFMAN SHLOMO

IPC: G03F1/08 ,  G03F1/14 ,  G03F7/20 ,  G06F17/10 ,  G06F17/50 ,  H01L21/00 ,  H01L21/027

CPC classification number: G03F1/36

Abstract: PROBLEM TO BE SOLVED: To provide a method for carrying out model-based optical proximity correction by disposing a mask matrix having a region of interest (ROI) and locating a plurality of points of interest within the mask matrix, and to provide a program storage device for executing the above method.
SOLUTION: A first polygon 200 having a plurality of vertices representative of the located points of interest is computed, followed by determining a spatial relationship between the vertices and the ROI 100. The vertices of the first polygon are pinned to boundaries of and within the ROI to form a second polygon 300 on the ROI. This processing is repeated for all vertices of the first polygon to collapse the second polygon on the ROI. The collapsed second polygon is used to correct for optical proximity.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种通过设置具有感兴趣区域（ROI）的掩模矩阵并且将多个感兴趣点定位在掩模矩阵内来执行基于模型的光学邻近校正的方法，并且提供 用于执行上述方法的程序存储装置。 解决方案：计算具有代表所定位的感兴趣点的多个顶点的第一多边形200，然后确定顶点和ROI 100之间的空间关系。第一多边形的顶点被固定到 在ROI内形成ROI上的第二多边形300。 对于第一多边形的所有顶点重复该处理以折叠ROI上的第二多边形。 折叠的第二个多边形用于校正光学接近度。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005128558A

公开(公告)日：2005-05-19

申请号：JP2004310682

申请日：2004-10-26

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GALLATIN GREGG M ,  GOFMAN EMANUEL ,  LAI KAFAI ,  LAVIN MARK A ,  MUKHERJEE MAHARAJ ,  RAMM DOV ,  ROSENBLUTH ALAN E ,  SHLAFMAN SHLOMO

IPC: G03F1/08 ,  G03F1/14 ,  G03F7/20 ,  G06F17/10 ,  H01L21/00 ,  H01L21/027

CPC classification number: G03F7/70441 ,  G03F1/36 ,  G03F1/70 ,  G03F7/705

Abstract: PROBLEM TO BE SOLVED: To provide a method for computing a phase map within an optical proximity correction simulation kernel. SOLUTION: A first method utilizes simulated wavefront information from randomly generated data. A second method uses measured data from optical tools. A phase map is created by analytically embedding a randomly generated two-dimensional array comprising complex numbers of wavefront information, and performing an inverse Fourier transform on the resultant array. A filtering function requires the amplitude of each element of the array to be multiplied by a Gaussian function. A power law is then applied to the array. The elements of the array are shuffled, and converted from a phasor form to a real/imaginary form. A two-dimensional fast Fourier transform is applied. The array is then unshuffled and converted back to the phasor form. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于计算光学邻近度校正模拟核心内的相位图的方法。 解决方案：第一种方法利用来自随机生成数据的模拟波前信息。 第二种方法使用来自光学工具的测量数据。 通过分析地嵌入包括复数个波阵面信息的随机生成的二维阵列并对所得到的阵列执行逆傅里叶变换来创建相位图。 滤波函数要求阵列的每个元素的幅度乘以高斯函数。 然后将幂律应用于阵列。 数组的元素被洗牌，并从相量形式转换为实数/虚数形式。 应用二维快速傅立叶变换。 然后将数组取消洗牌并转换回到相量形式。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2007201452A

公开(公告)日：2007-08-09

申请号：JP2006351657

申请日：2006-12-27

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： SHNEYDER DMITRIY ,  LAI KAFAI ,  RASCHID J BEZAMA ,  GOLDFARB DARIO L

IPC: H01L21/027 ,  G03F7/20 ,  H01L21/683

CPC classification number: G03D3/02 ,  G03F7/70341 ,  G03F7/70716 ,  G03F7/70916 ,  H01L21/68735

Abstract: PROBLEM TO BE SOLVED: To prevent the formation of air bubbles and reduce contamination in immersion lithography. SOLUTION: This device comprises a wafer chuck assembly 200 having a wafer chuck 202 constituted to hold a semiconductor wafer 104 on the supporting face of itself. This wafer chuck 202 has a gap 108 inside, and this gap 108 is located adjacent to the outer edge of the wafer 104. This gap 104 contains an immersion lithography liquid of a certain volume inside. A liquid circulation path is formed in the wafer chuck 202 in such a manner as to facilitate the radially outward transfer of the immersion lithography liquid in the gap, and thereby maintain the meniscus of the immersion lithography liquid at a selected height to the upper surface of the semiconductor wafer 104. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：防止气泡的形成和减少浸没式光刻中的污染。 解决方案：该装置包括晶片卡盘组件200，其具有构造成将半导体晶片104保持在其本身的支撑面上的晶片卡盘202。 该晶片卡盘202在内部具有间隙108，并且该间隙108位于晶片104的外边缘附近。该间隙104包含内部一定体积的浸没式光刻液。 液晶循环路径形成在晶片卡盘202中，以便于浸没式光刻液体在间隙中的径向向外转移，从而将浸没式光刻液体的弯液面保持在选定高度至 半导体晶片104.版权所有（C）2007，JPO＆INPIT