公开(公告)号：EP1920441A4

公开(公告)日：2009-04-29

申请号：EP06802479

申请日：2006-08-30

Applicant: IBM

Inventor： FREDEMAN GREGORY J ,  KIRIHATA TOSHIAKI ,  LESLIE ALAN J ,  SAFRAN JOHN M

IPC: G11C17/00 ,  G11C7/00 ,  G11C7/02

CPC classification number: G11C17/16 ,  G11C17/165 ,  G11C29/027

Abstract: A one-time-programmable-read-only-memory (OTPROM) is implemented in a two-dimensional array of aggressively scaled silicide migratable e-fuse. Word line (WL) selection is performed by decoding logic (140) at Vdd while the bit line drive is switched between Vdd and a higher voltage, Vp, for programming. The OTPROM is thus compatible with and can be integrated with other technologies without a cost adder and supports optimization of the high current patch for minimal voltage drop during fuse programming. A differential sense amplifier (120) with a programmable reference (130) is used for improved sense margins and can support an entire bit line rather than sense amplifiers (120) being provided for individual fuses.

公开(公告)号：WO2007027607A3

公开(公告)日：2007-08-16

申请号：PCT/US2006033536

申请日：2006-08-30

Applicant: IBM ,  FREDEMAN GREGORY J ,  KIRIHATA TOSHIAKI ,  LESLIE ALAN J ,  SAFRAN JOHN M

Inventor： FREDEMAN GREGORY J ,  KIRIHATA TOSHIAKI ,  LESLIE ALAN J ,  SAFRAN JOHN M

IPC: G11C17/00 ,  G11C7/00 ,  G11C7/02

CPC classification number: G11C17/16 ,  G11C17/165 ,  G11C29/027

Abstract: A one-time-programmable-read-only-memory (OTPROM) is implemented in a two-dimensional array of aggressively scaled silicide migratable e-fuse. Word line (WL) selection is performed by decoding logic (140) at Vdd while the bit line drive is switched between Vdd and a higher voltage, Vp, for programming. The OTPROM is thus compatible with and can be integrated with other technologies without a cost adder and supports optimization of the high current patch for minimal voltage drop during fuse programming. A differential sense amplifier (120) with a programmable reference (130) is used for improved sense margins and can support an entire bit line rather than sense amplifiers (120) being provided for individual fuses.

Abstract translation: 一次性可编程只读存储器（OTPROM）在二维阵列的大规模硅化物可迁移电子保险丝中实现。 通过在Vdd处的解码逻辑（140）来执行字线（WL）选择，同时位线驱动在Vdd和较高电压Vp之间切换用于编程。 因此，OTPROM与其他技术兼容，并且可以与其他技术集成而无需成本加法器，并支持在熔丝编程期间最小化电压降的高电流补丁的优化。 具有可编程参考（130）的差分读出放大器（120）用于改善感测余量，并且可以支持整个位线，而不是为各个保险丝提供感测放大器（120）。