1.
    发明专利
    未知

    公开(公告)号:DE69616645D1

    公开(公告)日:2001-12-13

    申请号:DE69616645

    申请日:1996-04-22

    Applicant: IBM

    Abstract: A head (10) is provided for reading and writing to tape media (48) along a tape head face. The tape head comprises a plurality of modules, each module comprising a read element (54) and a write element (52) spaced apart and terminating at the tape head face and formed over a substrate (12). The read element comprises a soft film bias layer (24) and a hard film bias layer (25) butted against the SFB layer. The write element comprises two pole tips (14,16) spaced apart by a gap (22). The tape head further includes a plurality of activating conducting coil turns (20) operatively associated with the write element and covered by a cross-linked photoresist and positioned between the gap and one of the pole tips and set back from the tape head face. The tape head has at least one of the following elements: (a) a wear shield (34) between the read element and the write element for limiting wear of the gap between the two pole tips, the wear shield being grounded for decoupling read and write functions of the tape head, for allowing same module read/servo/write functions simultaneously, and for grounding static charge from the tape media; (b) a layer of electrically conductive and corrosion-resistant material (62), such as rhodium, under the hard film bias layer to reduce its resistance; and (c) a non-activating dummy coil turn (120,220) closer to the pole tips than the activating coil turns for defining a forward termination of the cross-linked photoresist (38a) between the activating coil turns and the tape head face to thereby provide improved ease of processability.

    2.
    发明专利
    未知

    公开(公告)号:DE69616645T2

    公开(公告)日:2002-08-01

    申请号:DE69616645

    申请日:1996-04-22

    Applicant: IBM

    Abstract: A head (10) is provided for reading and writing to tape media (48) along a tape head face. The tape head comprises a plurality of modules, each module comprising a read element (54) and a write element (52) spaced apart and terminating at the tape head face and formed over a substrate (12). The read element comprises a soft film bias layer (24) and a hard film bias layer (25) butted against the SFB layer. The write element comprises two pole tips (14,16) spaced apart by a gap (22). The tape head further includes a plurality of activating conducting coil turns (20) operatively associated with the write element and covered by a cross-linked photoresist and positioned between the gap and one of the pole tips and set back from the tape head face. The tape head has at least one of the following elements: (a) a wear shield (34) between the read element and the write element for limiting wear of the gap between the two pole tips, the wear shield being grounded for decoupling read and write functions of the tape head, for allowing same module read/servo/write functions simultaneously, and for grounding static charge from the tape media; (b) a layer of electrically conductive and corrosion-resistant material (62), such as rhodium, under the hard film bias layer to reduce its resistance; and (c) a non-activating dummy coil turn (120,220) closer to the pole tips than the activating coil turns for defining a forward termination of the cross-linked photoresist (38a) between the activating coil turns and the tape head face to thereby provide improved ease of processability.

    METHOD FOR SIMULTANEOUSLY FORMING SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS ON DOPED SEMICONDUCTOR REGIONS

    公开(公告)号:DE2960971D1

    公开(公告)日:1981-12-24

    申请号:DE2960971

    申请日:1979-04-09

    Applicant: IBM

    Abstract: A method for selectively depositing contacts in semiconductor regions. One set of contact openings is protected by a barrier layer during the metallization of another set of exposed contact openings to improve the cleanliness and reliability of the contacts. The barrier layer is then removed and a second layer of metallization is deposited in both sets of openings. In the preferred embodiment a standard diffusion mask is used to define all contact regions and a screen oxide is thermally grown in each of the contact openings. A blocking photoresist mask is then applied and patterned to expose the oxide in those openings in which a first set of contacts is to be formed. The screen oxide is removed and the first layer of metallization, typically platinum silicide, is then formed. The screen oxide is then removed from the protected contact areas and the second layer of metallization, for example, chrome, aluminum, or other metals or combinations thereof are deposited in all openings, thereby forming one layer of metallurgy in the second set of openings and two layers in the first set.

Patent Agency Ranking