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公开(公告)号：DE69616645T2
公开(公告)日：2002-08-01
申请号：DE69616645
申请日：1996-04-22
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , DENISON EDWARD VIRGIL , FRIEDMAN JULES DAVID , KAHWATY VINCENT NOEL , KLUGE II
Abstract: A head (10) is provided for reading and writing to tape media (48) along a tape head face. The tape head comprises a plurality of modules, each module comprising a read element (54) and a write element (52) spaced apart and terminating at the tape head face and formed over a substrate (12). The read element comprises a soft film bias layer (24) and a hard film bias layer (25) butted against the SFB layer. The write element comprises two pole tips (14,16) spaced apart by a gap (22). The tape head further includes a plurality of activating conducting coil turns (20) operatively associated with the write element and covered by a cross-linked photoresist and positioned between the gap and one of the pole tips and set back from the tape head face. The tape head has at least one of the following elements: (a) a wear shield (34) between the read element and the write element for limiting wear of the gap between the two pole tips, the wear shield being grounded for decoupling read and write functions of the tape head, for allowing same module read/servo/write functions simultaneously, and for grounding static charge from the tape media; (b) a layer of electrically conductive and corrosion-resistant material (62), such as rhodium, under the hard film bias layer to reduce its resistance; and (c) a non-activating dummy coil turn (120,220) closer to the pole tips than the activating coil turns for defining a forward termination of the cross-linked photoresist (38a) between the activating coil turns and the tape head face to thereby provide improved ease of processability.
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公开(公告)号：HK210996A
公开(公告)日：1996-12-06
申请号：HK210996
申请日：1996-11-28
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , DENISON EDWARD BIRGIL , KAHWATY VINCENT NOEL , STEVING GERALD
Abstract: An interleaved bi-directional magnetic tape head for contact recording has a stripe poletip 30 in the form of a thin film of a soft magnetic material deposited onto a magnetic ferrite substrate 22. A second thin film polepiece 40 is deposited over a gap region 26. A closure block 24 of a non-magnetic ceramic encloses the layers together with leveling insulation layers 32, 34 and deposited activating conductor turns 36. The stripe poletip extends for a distance just short of the first conductor turn and provides a balancing of the saturation moment of the pole pieces and provides for better recording capability, especially when operating in a trailing magnetic ferrite mode.
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公开(公告)号：DE3267119D1
公开(公告)日：1985-12-05
申请号：DE3267119
申请日：1982-05-14
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , KLOKHOLM ERIK , HERD SIGRID RENEE
Abstract: This invention relates to a magnetic recording medium comprising a sputtered polycrystalline film of material having the formula CoxPty where x (Co) is up to 90 atomic percent of said material and y (Pt) is from 10 to 30 atomic of said material. The film has a magnetostriction value of from -35 x 10 to a value near substantially zero magnetostriction in the range of +/- 10 x 10 . The material has a coercivity Hc of from 500 to 2000 oersteds with a saturation magnetization of 400 gauss to 15,000 gauss.
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公开(公告)号：AU498236B2
公开(公告)日：1979-02-22
申请号：AU2029176
申请日：1976-12-06
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , BROADIE ROBERT WALLACE , PLISKIN WILLIAM AARON
IPC: H01L21/76 , H01L21/3105 , H01L21/316 , H01L21/331 , H01L21/762 , H01L29/73 , H01L21/82 , H01L21/326 , H01L27/04 , H01L21/22 , H01L21/265 , H01L21/32 , H01L21/20 , H01L21/324 , H01L29/70
Abstract: A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densified porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manufacturable by a relatively simple process. The process involves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidiation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxidized porous silicon regions. The result of this densification step is the collapse of the porous oxide to a dense structure which is substantially planar with the surface of the semiconductor wafer. This densified silicon dioxide structure has an etch rate which is substantially the same as thermally grown silicon dioxide.
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公开(公告)号：DE69213558D1
公开(公告)日：1996-10-17
申请号：DE69213558
申请日：1992-04-30
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , DENISON EDWARD BIRGIL , KAHWATY VINCENT NOEL , STEVING GERALD
Abstract: An interleaved bi-directional magnetic tape head for contact recording has a stripe poletip 30 in the form of a thin film of a soft magnetic material deposited onto a magnetic ferrite substrate 22. A second thin film polepiece 40 is deposited over a gap region 26. A closure block 24 of a non-magnetic ceramic encloses the layers together with leveling insulation layers 32, 34 and deposited activating conductor turns 36. The stripe poletip extends for a distance just short of the first conductor turn and provides a balancing of the saturation moment of the pole pieces and provides for better recording capability, especially when operating in a trailing magnetic ferrite mode.
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Patent Agency Ranking
公开(公告)号：DE2908972A1
公开(公告)日：1979-09-27
申请号：DE2908972
申请日：1979-03-07
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , CUOMO JEROME JOHN , GANGULEE AMITAVA , KOBLISKA ROBERT JOHN
IPC: C23C14/00 , C21D6/00 , C22F1/00 , C23C14/14 , C23C14/58 , H01F10/12 , H01F10/13 , H01F10/14 , H01F41/14 , H01F10/02 , G11B5/62 , G11B5/12 , G11C19/08
Abstract: A sputtered thin film of an amorphous material composed of a magnetic transition metal X and element Y plus possibly an element Z has low coercivity for domains in the plane, has a well defined and stable magnetic easy axis which is extremely stable without heating above the Curie point, with a high and flat value of permeability from low frequencies to greater than 10 megahertz. Metal X can include at least one of Fe, Ni, and Co. Element Y can include at least one of Si and B. Element Z can be included composed of Cr, for example.
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公开(公告)号：CH597691A5
公开(公告)日：1978-04-14
申请号：CH1320176
申请日：1976-10-19
Applicant: IBM
IPC: H01L21/76 , H01L21/3105 , H01L21/316 , H01L21/331 , H01L21/762 , H01L29/73
Abstract: A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densified porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manufacturable by a relatively simple process. The process involves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidiation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxidized porous silicon regions. The result of this densification step is the collapse of the porous oxide to a dense structure which is substantially planar with the surface of the semiconductor wafer. This densified silicon dioxide structure has an etch rate which is substantially the same as thermally grown silicon dioxide.
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公开(公告)号：DE2540901A1
公开(公告)日：1976-04-29
申请号：DE2540901
申请日：1975-09-13
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , BROADIE ROBERT WALLACE , HULL EDWARD MELVIN , POGGE HANS BERNHARD
IPC: H01L21/3063 , H01L21/223 , H01L21/306 , H01L21/316 , H01L21/331 , H01L29/04 , H01L29/08 , H01L29/73 , H01L21/22
Abstract: A high power semiconductor device is formed by providing a semiconductor substrate of N conductivity, rendering the backside of same porous as by subjecting same to anodic treatment carried out in a concentrated solution of hydrofluoric acid, converting the porous region to an N region, as by arsenic diffusion and forming an active device by conventional techniques in the top surface of the substrate. The method permits usage of high quality N substrates and at the same time eliminates the requirement of growing thick epitaxial layers.
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公开(公告)号：CA2064641C
公开(公告)日：1998-09-22
申请号：CA2064641
申请日：1992-04-01
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , DENISON EDWARD VIRGIL , KAHWATY VINCENT NOEL , STEVING GERALD
Abstract: An interleaved bi-directional magnetic tape head for contact recording can have a poletip enhanced by providing a thin film of a soft magnetic material deposited onto a magnetic ferrite substrate. The second pole piece is a thin film of the soft magnetic material. A closure block of a non-magnetic ceramic encloses the layers together with leveling insulation layers and a deposited activating conductor turns. The stripe poletip deposited onto the magnetic ferrite extends for a distance just short of the first conductor turn and provides a balancing of the saturation moment of the pole pieces and provides for better recording capability, especially when operating in a trailing magnetic ferrite mode.
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公开(公告)号：DE69012479T2
公开(公告)日：1995-03-30
申请号：DE69012479
申请日：1990-05-21
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , KAHWATY VINCENT NOEL , NIX JAMES LAMAR , SHELLEDY FRANK BOYD
Abstract: A soft film biased magnetoresistive sensor (10) is fabricated to have reduced Barkhausen noise. The magnetic ratio of the film layers (14 and 18) is controlled to be in the range of 1.7 to 1.95 and the optimum bias point is controlled to be in the range of 35 and 41 degrees.
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