公开(公告)号：JPH01219721A

公开(公告)日：1989-09-01

申请号：JP3545688

申请日：1988-02-19

Applicant: IBM

Inventor： FURUTA KAORU ,  YOSHIDA TOSHIHIKO

IPC: H01L21/3205 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE: To assure the degree of freedom in the positions where contact holes are set by depositing a vapor phase row insulating film having apertures on the metallic film on a substrate and denaturing the surface part of the metallic film in the apertures of this vapor phase grown insulating film, thereby forming an anodically oxidized film. CONSTITUTION: The anodically oxidizable metallic film 1 consisting of an alloy containing tantalum is formed on a transparent glass substrate 5. The insulating film 2 consisting of SiOx is then grown in a vapor phase by a prescribed film thickness. Next, only the regions requiring anodic oxidation are provided with the apertures of a photoresist 3 and, thereafter, the vapor phase grown insulating film of the regions requiring the anodic oxidation is removed, by which the apertures 2A of the vapor phase grown insulating film 2 are formed. The substrate 5 deposited with the metallic film 1, the insulating film 2 and the photoresist 3 is immersed into an electrolyte suitable for the metallic film 1. A current is then passed to the metallic film 1 as anode and platinum, etc., as cathode. The anodically oxidized film 4 is formed only on the metallic film 1 exposed in the apertures 2A and the degree of freedom in the positions where the contact holes are set is assured when this structural body is used for a liquid crystal display device.

公开(公告)号：CA1304807C

公开(公告)日：1992-07-07

申请号：CA592101

申请日：1989-02-24

Applicant: IBM

Inventor： FURUTA KAORU ,  YOSHIDA TOSHIHIKO

IPC: H01L21/3205 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  G02F1/133

Abstract: In anodic oxidation, using a conversion voltage as high as 100 volts, the region of anodizable metal layer covered with a vapor-grown insulation layer is not anodized. It is believed that because the vapor-grown insulation layer is dense and has high dielectric strength and small leakage current, the layer functions as a protective mask even when a conversion voltage as high as 100 volts is impressed. A metal insulation structure as taught in this disclosure has vapor-grown insulation layers having apertures, depsoited on an anodizable metal layer, and these vapor-grown insulation layers act as protective masks against anodic oxidation, anodized layers formed by converting at least the surface areas of said metal layers can be limited to an area of metal layers locating in the apertures of the vapor-grown insulation layers. JA9-88-001