CHIP CONTACTS WITHOUT OXIDE DISCONTINUITIES

    公开(公告)号:CA1277435C

    公开(公告)日:1990-12-04

    申请号:CA570925

    申请日:1988-06-30

    Applicant: IBM

    Abstract: Chip Contacts Without Opens An integrated circuit chip including a first and a higher second surface levels with an abrupt sidewall step transition therebetween, and having a first layer of a first conductive material disposed over the first surface level and over the second surface level, but terminating on the first surface level in a first end portion which extends up to but does not touch the sidewall. This end portion comprises a conductive material which has been converted to an insulator. A second layer of a second conductive material is disposed on top of the first conductive layer with essentially no conductive material conversion to insulator therein adjacent to the abrupt sidewall transition. In a preferred embodiment, the conductive material is an alloy of aluminum and the end portion is aluminum oxide.

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