公开(公告)号：JPH11121377A

公开(公告)日：1999-04-30

申请号：JP23775198

申请日：1998-08-24

Applicant: IBM

Inventor： SRIKRISHNAN KRIS V

IPC: H01L21/20 ,  H01L21/02 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To permit selection and control of uniformity and thickness of a silicon-type device layer, by using an etching stop layer formed by chemical evaporation under a device layer of a starting base. SOLUTION: A silicon single crystal semiconductor wafer 500 is used as a starting point, and a thin etching stop layer 505 having predetermined composition and thickness is epitaxially grown on the surface of the wafer 500. It is preferred that the etching stop layer 505 is a Ge compensation layer of Si-Ge doped at a high concentration, and that the dopant concentration is 10 -10 atoms/cm with boron. This layer is attached by using a chemical evaporation process. Next, a thin device layer 510 having selected thickness and dopant concentration is epitaxially attached onto the etching stop layer 505. The device layer 510 may be Si, Si-Ge, Ge, or other arbitrary compound semiconductors.

公开(公告)号：CA1257786A

公开(公告)日：1989-07-25

申请号：CA498313

申请日：1985-12-20

Applicant: IBM

Inventor： FOUTS DAVID P ,  GUPTA DEVANDRA ,  HO PAUL S ,  JASPAL JASVIR S ,  LLOYD JAMES R JR ,  OBERSCHMIDT JAMES M ,  SRIKRISHNAN KRIS V ,  SULLIVAN MICHAEL J

IPC: B23K1/00 ,  B23K35/26 ,  C22C1/00 ,  C22C11/06 ,  H01B1/02 ,  H01B13/00 ,  C22C30/04

Abstract: ELECTROMIGRATION LIFETIME INCREASE OF LEAD BASE ALLOYS Electromigration activity is decreased and lifetime is extended in solder stripes employed as conductors and terminals on microelectronic devices by forming an alloy of a solute element, such as copper, with tin in a lead/tin solder and providing a substantially uniform distribution of particles of the intermetallic compound in the solder. The concentration of the solute element is maintained at less than about three times the tin concentration and less than about 10% of the amount of the solder.

公开(公告)号：CA1277435C

公开(公告)日：1990-12-04

申请号：CA570925

申请日：1988-06-30

Applicant: IBM

Inventor： GAJDA JOSEPH J ,  SRIKRISHNAN KRIS V ,  TOTTA PAUL A ,  TRUDEAU FRANCIS G

IPC: H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L21/90

Abstract: Chip Contacts Without Opens An integrated circuit chip including a first and a higher second surface levels with an abrupt sidewall step transition therebetween, and having a first layer of a first conductive material disposed over the first surface level and over the second surface level, but terminating on the first surface level in a first end portion which extends up to but does not touch the sidewall. This end portion comprises a conductive material which has been converted to an insulator. A second layer of a second conductive material is disposed on top of the first conductive layer with essentially no conductive material conversion to insulator therein adjacent to the abrupt sidewall transition. In a preferred embodiment, the conductive material is an alloy of aluminum and the end portion is aluminum oxide.