公开(公告)号：GB2525397A

公开(公告)日：2015-10-28

申请号：GB201407089

申请日：2014-04-22

Applicant: IBM

Inventor： KREBS DANIEL ,  GALLO MANUEL LE ,  SEBASTIAN ABU

IPC: G11C13/00 ,  G11C11/56

Abstract: The invention relates a device and method for determining an actual level (L) of a multi level resistive memory cell having a plurality of programmable levels. The device comprises an estimator unit 110 and a detection unit 120 . The estimator unit 110 is adapted to receive a time input signal, t and a temperature input signal T and to estimate changes of a read-out signal of the levels of the resistive memory cell based on a time and temperature dependent model of the resistance changes, the received time input signal t and the received temperature input signal T. The detection unit is adapted to receive an actual read-out signal from the resistive memory cell and the estimated changes from the estimator unit. Further, the detection unit is adapted to determine the actual level of the resistive memory cell based on the received read-out signal and the received estimated changes. The estimator unit may be based on a model of a combination of a structural relaxation model and an electrical transport model. The structural relaxation model may be based on transitions between neighbouring states of the resistive memory corresponding to local minima.