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    Write once read only store semiconductor memory
    2.
    发明授权
    Write once read only store semiconductor memory 失效
    写入只读存储半导体存储器

    公开(公告)号：US3641516A

    公开(公告)日：1972-02-08

    申请号：US3641516D

    申请日：1969-09-15

    Applicant: IBM

    Inventor： CASTRUCCI PAUL P ,  GATES HARLAN R ,  HENLE ROBERT A ,  PRICER WILBUR DAVID ,  MORTON ROBERT M ,  MASON JOHN W ,  NORTH WILLIAM D

    IPC: F22B21/06 ,  G11C17/06 ,  G11C17/14 ,  G11C17/16 ,  H01L23/525 ,  H01L27/00 ,  H01L27/102 ,  G11C11/36 ,  G11C17/00

    CPC classification number: H01L27/1021 ,  F22B21/065 ,  G11C17/06 ,  G11C17/16 ,  H01L23/525 ,  H01L27/00 ,  H01L2924/0002 ,  Y10S148/055 ,  Y10S257/926 ,  H01L2924/00

    Abstract: A read only memory having the capability of being written into once after manufacture. The cells of the memory are capable of being fused or permanently altered by directing a fusing current to the selected cells. The cell is a monolithic semiconductor device comprising a diode to be biased in a forward direction and a diode to be biased in the reverse direction structured so as to form back-to-back diodes. The reverse diode has a lower reverse breakdown voltage than the forward diode, and a metal connection, unconnected to any remaining circuit elements contacts the semiconductor device between diode junctions. The fusing current causes a metal-semiconductor alloy to form and short out the reverse diode.

    Abstract translation: 一种只读存储器，具有在制造后被写入一次的能力。 存储器的单元能够通过将熔化电流引导到所选择的单元来融合或永久地改变。 电池是一个单片半导体器件，它包括一个正向偏置的二极管和一个反向偏置的二极管，以便形成背对背二极管。 反向二极管具有比正向二极管更低的反向击穿电压，并且未连接到任何剩余的电路元件的金属连接接触二极管接头之间的半导体器件。 熔断电流使金属半导体合金形成并短路反向二极管。

    NPN/PNP FABRICATION PROCESS WITH IMPROVED ALIGNMENT
    4.
    发明专利
    NPN/PNP FABRICATION PROCESS WITH IMPROVED ALIGNMENT 未知

    公开(公告)号：CA1118909A

    公开(公告)日：1982-02-23

    申请号：CA308650

    申请日：1978-08-03

    Applicant: IBM

    Inventor： GATES HARLAN R

    IPC: H01L21/331 ,  H01L21/8226 ,  H01L27/02 ,  H01L27/082 ,  H01L29/73 ,  H01L29/735 ,  H01L29/70

    Abstract: NPN/PNP FABRICATION PROCESS WITH IMPROVED ALIGNMENT A double diffused, lateral PNP structure is disclosed which may be formed simultaneously with the vertical NPN structure. The novel feature of the structure is the vertical projection of the N-type base region for the PNP, down through the surrounding diffused P-type collector?and into an N-type epitaxial layer between the collector diffusion and a buried sub-base, an N-type "sub-base", to electrically contact the base. The N-type epitaxial layer serves as the extrinsic base region permitting contact with the surface. The double diffused base and emitter structure permits a precise intrinsic base width to be formed for the lateral PNP. Thus, a high performance PNP can be constructed with compatible high performance NPNs on the same substrate.

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