公开(公告)号：DE1914090A1

公开(公告)日：1969-10-09

申请号：DE1914090

申请日：1969-03-20

Applicant: IBM

Inventor： PHILIP CASTRUCCI PAUL ,  GEORGE GROCHOWSKI JUN EDWARD

IPC: C23C16/12 ,  H01L21/00 ,  H01L23/485 ,  C23C11/02

Abstract: 1,196,237. Contacting semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 18 March, 1969 [21 March, 1968], No. 14012/69. Heading H1K. [Also in Division C7] Aluminium ohmic contacts are formed on a silicon dioxide masked semi-conductor device (Si or Ge) by the disproportionation of an aluminium monohalide vapour, preferably the chloride. Aluminium trichloride vapour carried by an argon stream is passed over molten aluminium heated to above 900‹ C. and the monochloride vapour thus formed is passed over substrates heated to a temperature in the range 350-500‹ C. The deposition rate may be controlled by controlling the source temperature and/or the rate of flow of carrier gas. The apparatus described (Fig. 2, not shown) is a resistance heated batch furnace (though R.F. inductive heating could be used) in which regenerated aluminium trichloride is recovered from the walls at the cold end of the furnace. It is suggested that in a continuous process apparatus could be used in which the substrates pass slowly through a depositing zone.