公开(公告)号：JP2000221686A

公开(公告)日：2000-08-11

申请号：JP2000013834

申请日：2000-01-24

Applicant: IBM

Inventor： CHINFA RIN ,  TIMOTHY M HUGHES ,  GEORGE M GIORDAMO ,  AAMADO D KATONAANII ,  MOREAU WAYNE M ,  NIRANJAN PATEL

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/039 ,  G03F7/075

Abstract: PROBLEM TO BE SOLVED: To provide the resist composition high in resolution and intensified in etching resistance by incorporating acid-sensitive protective groups in one of a polymer additive containing silicon and a base polymer containing no silicon and solubilizing both of the polymer additive and the base polymer in an aqueous basic solution after exposure processing. SOLUTION: The resist composition contains the polymer additive (a) containing silicon and the base polymer (b) containing no silicon and a photo- acid-generator and a solvent, and one of (a) and (b) contains the acid-sensitive protective groups and both of them are soluble in an aqueous basic solution after the exposure processing. The polymer additive (a) is a homopolymer of a siloxane and silane and silsesqueioxane or silyl homopolymer or a copolymer containing a monomer selected from a group comprising a siloxane, silane, silsesquinoxane, and silyl.