公开(公告)号：US3916036A

公开(公告)日：1975-10-28

申请号：US50959574

申请日：1974-09-26

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE M ,  NEED III OMAR U

IPC: G03F7/039 ,  B05D3/06

CPC classification number: G03F7/039 ,  Y10S430/126 ,  Y10S430/143

Abstract: Polysulfone resists are made more sensitive to decomposition by electron beam radiation and also made sensitive to radiation of light in the 3,000 to 5,000 A region by the addition of sensitizers which are either energy transfer agents or sources of free radicals.

公开(公告)号：US3676002A

公开(公告)日：1972-07-11

申请号：US3676002D

申请日：1969-06-30

Applicant: IBM

Inventor： MOREAU WAYNE M ,  ROTTMANN HANS R

IPC: G03F1/00 ,  G03B27/28

CPC classification number: G03F1/50

Abstract: THIS IS AN OPTICAL MASK PRIMARILY FOR USE IN THE MANUFACTURE OF SOLID STATE SEMICONDUCTOR DEVICES. THE MASK HAS INTEGRAL SPACER PORTIONS WHICH INTIMATELY CONTACT THE SURFACE OF THE DEVICE DURING THE STAGE IN THE PROCESSING WHEN THE PHOTORESIST IS EXPOSED. THESE INTEGRAL SPACERS NOT ONLY PROTECT THE MASK DURING CONTACT WITH THE DEVICE BUT ALSO PROVIDE IMPROVED DEVICES BECAUSE OF SUPERIOR OPTICAL CHARACTERISTICS.

公开(公告)号：US3695886A

公开(公告)日：1972-10-03

申请号：US3695886D

申请日：1970-09-29

Applicant: IBM

Inventor： CLECAK NICHOLAS J ,  COX ROBERT J ,  MOREAU WAYNE M

IPC: G03F7/008 ,  G03C1/52

CPC classification number: C07C247/00 ,  G03F7/008

Abstract: LIGHT SENSITIVE PHOTORESIST COMPOSITIONS PARTICULARLY USEFUL FOR PROJECTION EXPOSURE APPLICATIONS INCLUDE A PHOTOCROSSLINKABLE POLYMER AND NOVEL SENSITIZERS WHICH ARE BISP-AZIDO CINNAMYLIDENE DERIVATIVES OF CYCLIC AND LINEAR KETONES.

公开(公告)号：EP1521797A4

公开(公告)日：2006-12-20

申请号：EP02765835

申请日：2002-07-11

Applicant: IBM

Inventor： ANGELOPOULOS MARIE ,  ARIRAM ARI ,  GUARNIERI C RICHARD ,  HUANG WU-SONG ,  KWONG RANEE ,  MOREAU WAYNE M

IPC: C08G77/04 ,  C08K5/00 ,  B05D5/00 ,  B32B9/04 ,  C08G77/14 ,  C08G77/38 ,  C08J7/18 ,  C08K5/34 ,  C08K5/42 ,  C08L83/04 ,  C08L83/06 ,  G03C1/76 ,  G03F7/075 ,  G03F7/09 ,  H01L21/312 ,  H01L21/3213

CPC classification number: G03F7/091 ,  C08G77/04 ,  C08G77/38 ,  C08K5/3445 ,  C08K5/42 ,  C08L83/04 ,  C08L83/06 ,  C09D183/04 ,  G03F7/0752 ,  C08L2666/28 ,  C08L2666/36

Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.

公开(公告)号：EP1716450A4

公开(公告)日：2007-06-27

申请号：EP04710274

申请日：2004-02-11

Applicant: IBM

Inventor： MOREAU WAYNE M ,  ANGELOPOULOS MARIE ,  HUANG WU-SONG ,  MEDEIROS DAVID R ,  PETRILLO KAREN E

IPC: G03C1/73 ,  G03F1/08 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

CPC classification number: G03F7/0045 ,  G03F1/78 ,  G03F7/0392 ,  G03F7/40 ,  Y10S430/143

Abstract: Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.

Abstract translation: 抗蚀剂甚至在困难的基板良好的基础性质的组合物通过使用包括室温下为固体的基础上，和液体低蒸气压碱碱添加剂的组合获得。 该组合物的爱在金属衬底上是特别有用的：如在掩模制造常用的含铬层。

公开(公告)号：JP2002323773A

公开(公告)日：2002-11-08

申请号：JP2002031631

申请日：2002-02-08

Applicant: IBM

Inventor： MESSICK SCOTT A ,  MOREAU WAYNE M ,  CHRISTOPHER F ROBINSON

IPC: B05D1/02 ,  B05D7/00 ,  G03F7/32 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a device and a method to develop a photoresist pattern on the substrate of electronic parts such as semiconductor wafers. SOLUTION: A specified developer composition and a specified rinsing liquid composition are successively used to develop an exposed photoresist pattern and to rinse the developed pattern. Both of the developer composition and the rising liquid composition contain anionic surfactants. By successively using the above solutions, a resist pattern with the pattern prevented from deformation can be obtained even when small features of about >3 aspect ratio and

公开(公告)号：WO2005088393A8

公开(公告)日：2006-09-14

申请号：PCT/US2004004144

申请日：2004-02-11

Applicant: IBM ,  MOREAU WAYNE M ,  ANGELOPOULOS MARIE ,  HUANG WU-SONG ,  MEDEIROS DAVID R ,  PETRILLO KAREN E

Inventor： MOREAU WAYNE M ,  ANGELOPOULOS MARIE ,  HUANG WU-SONG ,  MEDEIROS DAVID R ,  PETRILLO KAREN E

IPC: G03C1/73 ,  G03F1/08 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

CPC classification number: G03F7/0045 ,  G03F1/78 ,  G03F7/0392 ,  G03F7/40 ,  Y10S430/143

Abstract: Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.

Abstract translation: 通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。 该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。

公开(公告)号：JPS62135824A

公开(公告)日：1987-06-18

申请号：JP25714886

申请日：1986-10-30

Applicant: IBM

Inventor： MOREAU WAYNE M ,  CHIONG KAOLIN N ,  CHOW MING-FEA ,  SNYDER NANCY W

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/022 ,  G03F7/023 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

公开(公告)号：JP2004200658A

公开(公告)日：2004-07-15

申请号：JP2003383178

申请日：2003-11-12

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： COTTE JOHN M ,  IVERS CATHERINE ,  MCCULLOUGH KENNETH J ,  MOREAU WAYNE M ,  PURTELL ROBERT J ,  SIMONS JOHN P ,  SYVERSON WILLIAM A ,  TAFT CHARLES J

IPC: H01L21/304 ,  B08B7/00 ,  C25F1/00 ,  H01L21/30 ,  H01L21/302 ,  H01L21/306

CPC classification number: B08B7/0021 ,  H01L21/02063 ,  Y10S134/902

Abstract: PROBLEM TO BE SOLVED: To provide a method and device for removing a solid residual or a liquid residual, or both of them, from an electronic component such as a semiconductor wafer or the like.
SOLUTION: The residual is solidified on the surface of the wafer by the use of liquid or a supercritical carbon dioxide, and then the residual is removed by vaporization from the system. In a favorable embodiment, after the solidifying step and the vaporizing step are repeated (cycled), the CO
2 is removed from a vessel. The residual is removed with the vaporizing carbon dioxide.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2000221686A

公开(公告)日：2000-08-11

申请号：JP2000013834

申请日：2000-01-24

Applicant: IBM

Inventor： CHINFA RIN ,  TIMOTHY M HUGHES ,  GEORGE M GIORDAMO ,  AAMADO D KATONAANII ,  MOREAU WAYNE M ,  NIRANJAN PATEL

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/039 ,  G03F7/075

Abstract: PROBLEM TO BE SOLVED: To provide the resist composition high in resolution and intensified in etching resistance by incorporating acid-sensitive protective groups in one of a polymer additive containing silicon and a base polymer containing no silicon and solubilizing both of the polymer additive and the base polymer in an aqueous basic solution after exposure processing. SOLUTION: The resist composition contains the polymer additive (a) containing silicon and the base polymer (b) containing no silicon and a photo- acid-generator and a solvent, and one of (a) and (b) contains the acid-sensitive protective groups and both of them are soluble in an aqueous basic solution after the exposure processing. The polymer additive (a) is a homopolymer of a siloxane and silane and silsesqueioxane or silyl homopolymer or a copolymer containing a monomer selected from a group comprising a siloxane, silane, silsesquinoxane, and silyl.