公开(公告)号：JPH1050943A

公开(公告)日：1998-02-20

申请号：JP12686997

申请日：1997-05-16

Applicant: IBM

Inventor： GOLDEN KEVIN M ,  PAN PAI-HUNG ,  STEWART KEVIN J ,  THOMAS ALAN C

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To get a trench capacitor, which has buried plates in high integration density, by a simple method, by including a stage of etching a diffusion source, according to the nonexposed section of resist, and a stage of completing a trench capacitor. SOLUTION: A trench 210 is etched within a substrate 110, according to a TEOS layer 140 made by pattern. Then in order to fill up the trench 210 surely, resist is made poor in temperature stability so that the reflow of the resist may be executed at high temperature after adhesion. Next, the resist is provided with a recess as far as about 1.5 micron below the substrate by exposure and development. Then, the trench is filled up with n+ polycrystalline silicon or other proper material. Next, using reactive ion etching, the filler is lowered to about 1.2μm from the surface of the substrate. The residual part of the trench is fill up again with n+ polycrystalline silicon or other proper material, and it is slightly lowered by RIE or other proper etching method, whereupon it is completed.