公开(公告)号：JPH11317353A

公开(公告)日：1999-11-16

申请号：JP2111099

申请日：1999-01-29

Applicant: IBM

Inventor： GOLLADAY STEVEN D ,  PAUL F PETRICK ,  PFEIFFER HANS C ,  BERNAR STICKEL

IPC: H01J37/305 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide with good reliability, high resolution and throughput an extremely a feature size smaller than 0.25 micron method by applying a couple of physical structure with respect to basic element of an electron beam lithography exposure system and range of the combination of operating parameters. SOLUTION: An electron beam projection system comprises an electron source 19 of high emissive power, an axis-variable lens 8, a curve beam trajectory 104, a reticule 204, and/or target movement in double scan mode. A target and/or a wafer 224 moves constantly in the direction orthogonal to beam scan. A high throughput is obtained in accordance with 0.1 μm feature size basic rule. Here, a column length longer than 400 mm, beam current of about 4-35 μA, beam energy of about 75-175 kV, sub-field size of 0.1-0.5 at a target in optical reduction factor of about 3:1-5:1, a numerical aperture which is larger than 2 milli radian (3-8 milli radian is preferred), and a scan length of about 20-55 mm, are used.

公开(公告)号：CA2102880C

公开(公告)日：1998-11-24

申请号：CA2102880

申请日：1993-11-10

Applicant: IBM

Inventor： GOLLADAY STEVEN D

IPC: G01R31/02 ,  G01Q30/02 ,  G01R31/26 ,  G01R31/28 ,  G01R31/305 ,  H01L21/66

Abstract: A method for measuring electrical characteristics of an electrical device having a conductive structure associated therewith involves the sequence of steps as follows: First, employ a low energy electron beam to charge all conductors on the surface of the device. Expose individual conductors to a focussed low energy electron beam serially. Make measurements of an induced current signal when individual conductors are exposed to the focussed electron beam. Analyze induced current measurements derived from the individual conductors. Then determine electrical characteristics of the device based on the analysis. A charge storage method and three capacitive test methods for defect detection and methods for shorts delineation are described.

公开(公告)号：CA2102880A1

公开(公告)日：1994-09-26

申请号：CA2102880

申请日：1993-11-10

Applicant: IBM

Inventor： GOLLADAY STEVEN D

IPC: G01R31/02 ,  G01Q30/02 ,  G01R31/26 ,  G01R31/28 ,  G01R31/305 ,  H01L21/66

Abstract: A method for measuring electrical characteristics of an electrical device having a conductive structure associated therewith involves the sequence of steps as follows: First, employ a low energy electron beam to charge all conductors on the surface of the device. Expose individual conductors to a focussed low energy electron beam serially. Make measurements of an induced current signal when individual conductors are exposed to the focussed electron beam. Analyze induced current measurements derived from the individual conductors. Then determine electrical characteristics of the device based on the analysis. A charge storage method and three capacitive test methods for defect detection and methods for shorts delineation are described.