公开(公告)号：JPH11317353A

公开(公告)日：1999-11-16

申请号：JP2111099

申请日：1999-01-29

Applicant: IBM

Inventor： GOLLADAY STEVEN D ,  PAUL F PETRICK ,  PFEIFFER HANS C ,  BERNAR STICKEL

IPC: H01J37/305 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide with good reliability, high resolution and throughput an extremely a feature size smaller than 0.25 micron method by applying a couple of physical structure with respect to basic element of an electron beam lithography exposure system and range of the combination of operating parameters. SOLUTION: An electron beam projection system comprises an electron source 19 of high emissive power, an axis-variable lens 8, a curve beam trajectory 104, a reticule 204, and/or target movement in double scan mode. A target and/or a wafer 224 moves constantly in the direction orthogonal to beam scan. A high throughput is obtained in accordance with 0.1 μm feature size basic rule. Here, a column length longer than 400 mm, beam current of about 4-35 μA, beam energy of about 75-175 kV, sub-field size of 0.1-0.5 at a target in optical reduction factor of about 3:1-5:1, a numerical aperture which is larger than 2 milli radian (3-8 milli radian is preferred), and a scan length of about 20-55 mm, are used.