公开(公告)号：DE3851701T2

公开(公告)日：1995-03-30

申请号：DE3851701

申请日：1988-06-03

Applicant: IBM

Inventor： GRAF VOLKER DR ,  MUELLER CARL ALEXANDER PROF DR

IPC: C30B23/08 ,  C01G1/00 ,  C23C14/08 ,  C23C14/24 ,  C30B25/02 ,  C30B29/22 ,  H01B12/00 ,  H01B13/00 ,  H01L39/12 ,  H01L39/24

Abstract: This is a method for making layered structures of artificial high-Tc superconductor compounds by which on top of a seed crystal (7) having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers (4, 5, 6) of all constituent components are epitaxially grown in a predetermined sequence so as to create a sandwich structure not found in natural crystals. The epitaxial deposition of the constituent components is performed in a reaction chamber having evaporation facilities, inlets for metal-organic gases, and inlets for background gases including oxygen.

公开(公告)号：ES2060622T3

公开(公告)日：1994-12-01

申请号：ES88108908

申请日：1988-06-03

Applicant: IBM

Inventor： GRAF VOLKER DR ,  MULLER CARL ALEXANDER PROF DR

IPC: C30B23/08 ,  C01G1/00 ,  C23C14/08 ,  C23C14/24 ,  C30B25/02 ,  C30B29/22 ,  H01B12/00 ,  H01B13/00 ,  H01L39/12 ,  H01L39/24

Abstract: This is a method for making layered structures of artificial high-Tc superconductor compounds by which on top of a seed crystal (7) having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers (4, 5, 6) of all constituent components are epitaxially grown in a predetermined sequence so as to create a sandwich structure not found in natural crystals. The epitaxial deposition of the constituent components is performed in a reaction chamber having evaporation facilities, inlets for metal-organic gases, and inlets for background gases including oxygen.

公开(公告)号：DE3851701D1

公开(公告)日：1994-11-03

申请号：DE3851701

申请日：1988-06-03

Applicant: IBM

Inventor： GRAF VOLKER DR ,  MUELLER CARL ALEXANDER PROF DR

IPC: C30B23/08 ,  C01G1/00 ,  C23C14/08 ,  C23C14/24 ,  C30B25/02 ,  C30B29/22 ,  H01B12/00 ,  H01B13/00 ,  H01L39/12 ,  H01L39/24

Abstract: This is a method for making layered structures of artificial high-Tc superconductor compounds by which on top of a seed crystal (7) having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers (4, 5, 6) of all constituent components are epitaxially grown in a predetermined sequence so as to create a sandwich structure not found in natural crystals. The epitaxial deposition of the constituent components is performed in a reaction chamber having evaporation facilities, inlets for metal-organic gases, and inlets for background gases including oxygen.

公开(公告)号：AT112418T

公开(公告)日：1994-10-15

申请号：AT88108908

申请日：1988-06-03

Applicant: IBM

Inventor： GRAF VOLKER DR ,  MUELLER CARL ALEXANDER PROF DR

IPC: C30B23/08 ,  C01G1/00 ,  C23C14/08 ,  C23C14/24 ,  C30B25/02 ,  C30B29/22 ,  H01B12/00 ,  H01B13/00 ,  H01L39/12 ,  H01L39/24

Abstract: This is a method for making layered structures of artificial high-Tc superconductor compounds by which on top of a seed crystal (7) having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers (4, 5, 6) of all constituent components are epitaxially grown in a predetermined sequence so as to create a sandwich structure not found in natural crystals. The epitaxial deposition of the constituent components is performed in a reaction chamber having evaporation facilities, inlets for metal-organic gases, and inlets for background gases including oxygen.

公开(公告)号：DE3576610D1

公开(公告)日：1990-04-19

申请号：DE3576610

申请日：1985-12-06

Applicant: IBM

Inventor： GRAF VOLKER DR ,  OOSENBRUG ALBERTUS

IPC: H01L29/812 ,  H01L21/336 ,  H01L21/338 ,  H01L21/28

Abstract: A process for the fabrication of "low temperature"-­gate MESFET structures (10), i.e., gate metal (15G) deposition takes place after annealing of the n⁺-implant that form source- (13S) and drain- (13D) contact regions. The process permits self-alignment of all three important MESFET parts, namely the implanted contact regions (13S, 13D) and both, the ohmic- (14S, 14D) as well as the gate- ­(15G) contact metallizations.In the process, a multi-layer "inverted-T" structure (30) is used as a mask for the n⁺-implant and for the ohmic- and gate-metallizations. The upper part (23G) of the "inverted-T" is a so-called dummy gate which is replaced by the Schottky gate after ohmic contact metal deposition. The source-gate and drain-gate separations are determined by the shoulders of the lower layer (22G), the shoulders being obtained using sidewall techniques.