公开(公告)号：DE3374485D1

公开(公告)日：1987-12-17

申请号：DE3374485

申请日：1983-01-26

Applicant: IBM

Inventor： ANDERSON NATHANIEL CARL ,  DABY LARRY EUGENE ,  GRAVDAHL VINCENT DEAN ,  MCCAFFREY PATRICK MICHAEL ,  MURRAY BRUCE ALLEN ,  WRIGHT BRUCE WAYNE

IPC: C23F4/00 ,  C23F1/00 ,  G03F7/00 ,  G11B5/127 ,  G11B5/133 ,  G11B5/193 ,  G11B5/31 ,  H01F41/34 ,  H01F41/14

Abstract: A process for producing a reactive ion-etched structure with height and width dimensions of the order of 25 microns or less on a ferrite substrate (12) surface is disclosed. A mask (18) of positive water saturated photoresist is formed on the substrate. A metal taken from the group consisting of nickel and a nickel-iron alloy is plated through the mask. The photoresist mask is removed to leave a pattern (20) in the plated metal. The ferrite substrate surface that is exposed by the pattern is reactive ion etched with a power density of more than 1w/cm 2 and a bias voltage less than -100 volts.