公开(公告)号：DE68920291T2

公开(公告)日：1995-07-06

申请号：DE68920291

申请日：1989-10-10

Applicant: IBM

Inventor： GRECO NANCY ANN ,  GRECO STEPHEN EDWARD

IPC: H01L21/3213 ,  H01L21/3205 ,  H01L21/768 ,  H05K3/46 ,  H01L21/60 ,  G03F7/008

Abstract: A method is provided for forming a conductive stud and line over a surface (12), comprising the steps of forming at least a first layer of material (14) over the region on the surface whereat the conductive stud and line are to be formed; forming a layer (22) of dual image photoresist over the material; exposing the dual image photoresist to radiation so as to form at least first and second regions (22A, 22B, 22C) exhibiting different development characteristics; developing the first region (22A) so as to expose a portion of the material; removing the exposed portion of the material so as to define the position of one of the conductive line or stud; developing the second region to expose more of the material; and removing the newly exposed portion of material so as to define the position of the other of the conductive line (16 min /18 min ) or stud (20 min ).

公开(公告)号：DE68920291D1

公开(公告)日：1995-02-09

申请号：DE68920291

申请日：1989-10-10

Applicant: IBM

Inventor： GRECO NANCY ANN ,  GRECO STEPHEN EDWARD

IPC: H01L21/3213 ,  H01L21/3205 ,  H01L21/768 ,  H05K3/46 ,  H01L21/60 ,  G03F7/008

Abstract: A method is provided for forming a conductive stud and line over a surface (12), comprising the steps of forming at least a first layer of material (14) over the region on the surface whereat the conductive stud and line are to be formed; forming a layer (22) of dual image photoresist over the material; exposing the dual image photoresist to radiation so as to form at least first and second regions (22A, 22B, 22C) exhibiting different development characteristics; developing the first region (22A) so as to expose a portion of the material; removing the exposed portion of the material so as to define the position of one of the conductive line or stud; developing the second region to expose more of the material; and removing the newly exposed portion of material so as to define the position of the other of the conductive line (16 min /18 min ) or stud (20 min ).