公开(公告)号：DE3573044D1

公开(公告)日：1989-10-19

申请号：DE3573044

申请日：1985-03-13

Applicant: IBM

Inventor： FREDERICKS EDWARD CARMINE ,  GREENHAUS HERBERT LOUIS ,  NANDA MADAN MOHAN ,  VIA GIORGIO GIULIO

IPC: G03F7/095 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027 ,  H01L21/312

Abstract: @ A photoresist photolithographic process is disclosed which provides for a single development step to develop a dual layer photoresist for lift-off, reactive ion etching, or ion implantation processes requiring a precise aperture size at the top of the photoresist layer.The process involves the deposition of two compositionally similar layers, with the first layer having the characteristic of being soluble in a developer after exposure to light and baking, and the second layer having the characteristic of being insoluble in the same developer after having been exposed to light and baked. With these two distinct characteristics for the two layers of photoresist, the effective aperture for windows in the composite photoresist can be tightly controlled in its cross-sectional dimension in the face of large variations in the developer concentration and devel- opmenttime.