公开(公告)号：DE3573044D1

公开(公告)日：1989-10-19

申请号：DE3573044

申请日：1985-03-13

Applicant: IBM

Inventor： FREDERICKS EDWARD CARMINE ,  GREENHAUS HERBERT LOUIS ,  NANDA MADAN MOHAN ,  VIA GIORGIO GIULIO

IPC: G03F7/095 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027 ,  H01L21/312

Abstract: @ A photoresist photolithographic process is disclosed which provides for a single development step to develop a dual layer photoresist for lift-off, reactive ion etching, or ion implantation processes requiring a precise aperture size at the top of the photoresist layer.The process involves the deposition of two compositionally similar layers, with the first layer having the characteristic of being soluble in a developer after exposure to light and baking, and the second layer having the characteristic of being insoluble in the same developer after having been exposed to light and baked. With these two distinct characteristics for the two layers of photoresist, the effective aperture for windows in the composite photoresist can be tightly controlled in its cross-sectional dimension in the face of large variations in the developer concentration and devel- opmenttime.

公开(公告)号：DE3780743T2

公开(公告)日：1993-03-11

申请号：DE3780743

申请日：1987-09-22

Applicant: IBM

Inventor： NANDA MADAN MOHAN ,  PETERMAN STEVEN LOUIS ,  STANASOLOVICH DAVID

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L23/522 ,  H01L21/31 ,  H01L21/60

Abstract: A process for defining vias through a polyimide and silicon nitride layer: 1. Providing a substrate having a first layer of silicon nitride and a second layer of polyimide; 2. Depositing a layer of photoresist capable of producing negatively sloped walls; 3. Lithographically defining a pattern of vias in the photoresist; 4. Developing the photoresist to produce a pattern of vias having negatively sloped walls; 5. Etching the polyimide layer using the developed photoresist layer as an etch mask with a CF4/O2 gas mixture; and 6. Etching the silicon nitride layer using the etched polyimide layer as an etch mask with a CF4/H2 gas mixture. y

公开(公告)号：DE3780743D1

公开(公告)日：1992-09-03

申请号：DE3780743

申请日：1987-09-22

Applicant: IBM

Inventor： NANDA MADAN MOHAN ,  PETERMAN STEVEN LOUIS ,  STANASOLOVICH DAVID

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L23/522 ,  H01L21/31 ,  H01L21/60

Abstract: A process for defining vias through a polyimide and silicon nitride layer: 1. Providing a substrate having a first layer of silicon nitride and a second layer of polyimide; 2. Depositing a layer of photoresist capable of producing negatively sloped walls; 3. Lithographically defining a pattern of vias in the photoresist; 4. Developing the photoresist to produce a pattern of vias having negatively sloped walls; 5. Etching the polyimide layer using the developed photoresist layer as an etch mask with a CF4/O2 gas mixture; and 6. Etching the silicon nitride layer using the etched polyimide layer as an etch mask with a CF4/H2 gas mixture. y