公开(公告)号：JP2007318141A

公开(公告)日：2007-12-06

申请号：JP2007135218

申请日：2007-05-22

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： LIN QINGHUANG ,  YANG CHIH-CHAO ,  SPOONER TERRY A ,  GRISELDA BONILLA

IPC: H01L21/768 ,  H01L21/312 ,  H01L21/316 ,  H01L21/3205 ,  H01L23/52

CPC classification number: H01L23/53295 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an interconnection structure with improved adhesion between a noble metal liner and dielectric material adjacent thereto.
SOLUTION: The structure relates to the interconnection structure with improved adhesion between a chemically etched dielectric material and a noble metal liner, as well as a method for manufacturing the structure. The structure includes a step of processing the chemically etched dielectric material to change chemical properties of the dielectric material so that the processed surface can become hydrophobic. The processing step is carried out before deposition of the noble metal liner, whereby the adhesion between the chemically etched dielectric material and the noble metal liner can be improved.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供具有改进的贵金属衬垫和与其相邻的电介质材料之间的粘附性的互连结构。 解决方案：该结构涉及具有改进的化学蚀刻介电材料和贵金属衬垫之间的粘附性的互连结构以及制造该结构的方法。 该结构包括处理化学蚀刻的电介质材料以改变电介质材料的化学性质以使经处理的表面变得疏水的步骤。 在沉积贵金属衬垫之前进行处理步骤，从而可以改善化学蚀刻的电介质材料和贵金属衬垫之间的粘合性。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：GB2523948B

公开(公告)日：2017-02-22

申请号：GB201511991

申请日：2013-12-09

Applicant: IBM

Inventor： JUNJING BAO ,  GRISELDA BONILLA ,  RONALD G FILIPPI ,  NAFTALI E LUSTIG ,  ANDREW H SIMON ,  SAMUEL S CHOI

IPC: H01L23/532 ,  H01L21/768

公开(公告)号：SG192319A1

公开(公告)日：2013-08-30

申请号：SG2012052866

申请日：2009-07-30

Applicant: GLOBALFOUNDRIES SG PTE LTD ,  IBM ,  SAMSUNG ELECTRONICS CO LTD

Inventor： GRISELDA BONILLA ,  CHENG TIEN ,  LAWRENCE A CLEVENGER ,  STEPHAN GRUNOW ,  HU CHAO-KUN ,  ROGER A QUON ,  SUN ZHIGUO ,  TSENG WEI-TSUI ,  XU YIHENG ,  WANG YUN ,  OH HYEOK-SANG

Abstract: OF THE DISCLOSUREInterconnect structures comprising capping layers with low dielectric constants and good oxygen barrier properties and methods of making the same are provided. In one embodiment, the integrated circuit structure comprises: an interlevel dielectric layer disposed above a semiconductor substrate; a conductive interconnect embedded in the interlevel dielectric layer; a first capping layer comprising SiwCxNyH, disposed upon the conductive interconnect; a second capping layer comprising SiaCbNcHd (has less N) having a dielectric constant less than about 4 disposed upon the first capping layer; and a third capping layer comprising SiwCxNyH, disposed upon the second capping layer, wherein a+b+c+d= 1.0 and a, b, c, and d are each greater than 0 and less than 1, and wherein w+x+y+z= 1.0 and w, x, y, and z are each greater than 0 and less than 1.Fig. 1