公开(公告)号：DE3662827D1

公开(公告)日：1989-05-18

申请号：DE3662827

申请日：1986-08-29

Applicant: IBM

Inventor： CULLUM DOUGLAS G ,  GIUFFRE GEORGE J ,  GROVES TIMOTHY R ,  STICKEL WERNER ,  STURANS MARIS A

IPC: B41J2/085 ,  H01J3/30 ,  H01J29/74 ,  H01J37/147 ,  H01J29/70 ,  B41J3/04 ,  G01D15/16

公开(公告)号：CA1270895A

公开(公告)日：1990-06-26

申请号：CA509773

申请日：1986-05-22

Applicant: IBM

Inventor： CULLUM DOUGLAS G ,  GIUFFRE GEORGE J ,  GROVES TIMOTHY R ,  STICKEL WERNER ,  STURANS MARIS A

IPC: B41J2/085 ,  H01J3/30 ,  H01J29/74 ,  H01J37/147 ,  H01J29/70 ,  G01D15/16

Abstract: FI9-84-059 CONDUCTIVE COATED SEMICONDUCTOR ELECTROSTATIC DEFLECTION PLATES An electrostatic deflection plate for charged particle beam systems is formed of a planar semiconductive substrate having a conductive region at the substrate surface. The conductive region is diffused or implanted into the body of the substrate, or one or more conductive lavers are deposited upon the substrate surface. The substrate material is preferably silicon and the diffused or implanted region is formed of a nonmagnetic, nonoxidizable metal such as gold or platinum. The deposited conductive region may be formed of a single layer of these or similar metals, one or more conductive underlayers with a nonmagnetic, nonoxidizable overlayer, a single or multilayer structure with a conductive oxide on the outermost layer, or a metallo-organic compound which forms a conductive layer during following heat treatment. The deflection plates are fabricated using conventional semiconductor processes and form durable structures which minimize eddy current effects.