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公开(公告)号：JPH10229046A
公开(公告)日：1998-08-25
申请号：JP865298
申请日：1998-01-20
Applicant: IBM
Inventor： ROBINSON CHRISTOPHER FREDERICK , STICKEL WERNER
IPC: G03F7/20 , H01J37/00 , H01J37/305 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To determine the limit of the resolution of electron beam projection lithography by comparing the resolutions of formed patterns using first and second test focus plates in order to evaluate the effect of the different currents of an electron beam on the resolutions of the formed patterns. SOLUTION: In the system 10, an electron gun 12 emits an electron beam 40, and the electron beam 40 is passed through an iris 14 to form the electron beam 40 so that the electron beam 40 has a specific cross-sectional shape. The electron beam is projected onto a focus plate 22 through lenses 16 and a plate 20 to form the cross-sectional shape of the electron beam. In the system 10, two or more test focus plates are simultaneously replaced with the focus plate 22 to form two patterns. The resolutions of these patterns and the difference between the resolutions can be measured or analyzed. Subsequently, the difference between the measured resolutions of the two formed patterns can be correlated with the difference between two currents. When the pattern density is locally varied, the currents are varied without adjusting the electron gun 12; therefore, measurement is significantly facilitated.
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公开(公告)号：DE3266126D1
公开(公告)日：1985-10-17
申请号：DE3266126
申请日：1982-04-15
Applicant: IBM
Inventor： PFEIFFER HANS CHRISTIAN , SIMPSON ROBERT ARTHUR , STICKEL WERNER
IPC: H01L21/66 , G01Q30/02 , G01R31/02 , G01R31/302 , G01R31/305 , H05K3/46 , G01R31/28
Abstract: An electron beam system for non contact testing of three dimensional networks of conductors embedded in dielectric material, specifically detection of open and short circuit conditions. Top to bottom and top to top surface wiring is tested electrically without making physical electrical contact. The system comprises two flood beams and a focus probe beam wih one flood beam located at either side of the specimen. Proper choice of acceleration potentials, beam currents and dwell times of the beams allow alteration of the secondary electron emission from the specimen in such a way that electrical properties of the conductor networks can be measured directly. The difference in secondary electron emission resulting from different surface potentials is detected as a strong signal which allows clear discrimination between uninterrupted and interrupted as well as shorted pairs of conductors. This testing system can be applied to the high speed testing of advanced VLSI packaging substrates as well as to the greensheets, sublaminates, and laminates from which they are fabricated.
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公开(公告)号：DE69432098D1
公开(公告)日：2003-03-13
申请号：DE69432098
申请日：1994-11-24
Applicant: IBM
Inventor： PFEIFFER HANS CHRISTIAN , STICKEL WERNER
IPC: G03F7/20 , H01J37/317 , H01L21/027 , H01J37/302 , H01J37/304 , H01J37/30
Abstract: An electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.
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公开(公告)号：CA1270895A
公开(公告)日：1990-06-26
申请号：CA509773
申请日：1986-05-22
Applicant: IBM
Inventor： CULLUM DOUGLAS G , GIUFFRE GEORGE J , GROVES TIMOTHY R , STICKEL WERNER , STURANS MARIS A
Abstract: FI9-84-059 CONDUCTIVE COATED SEMICONDUCTOR ELECTROSTATIC DEFLECTION PLATES An electrostatic deflection plate for charged particle beam systems is formed of a planar semiconductive substrate having a conductive region at the substrate surface. The conductive region is diffused or implanted into the body of the substrate, or one or more conductive lavers are deposited upon the substrate surface. The substrate material is preferably silicon and the diffused or implanted region is formed of a nonmagnetic, nonoxidizable metal such as gold or platinum. The deposited conductive region may be formed of a single layer of these or similar metals, one or more conductive underlayers with a nonmagnetic, nonoxidizable overlayer, a single or multilayer structure with a conductive oxide on the outermost layer, or a metallo-organic compound which forms a conductive layer during following heat treatment. The deflection plates are fabricated using conventional semiconductor processes and form durable structures which minimize eddy current effects.
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公开(公告)号：CA2131670C
公开(公告)日：1999-01-12
申请号：CA2131670
申请日：1994-09-08
Applicant: IBM
Inventor： PFEIFFER HANS C , STICKEL WERNER
IPC: G03F7/20 , H01J37/317 , H01L21/027
Abstract: An electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10 7 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.
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Patent Agency Ranking
公开(公告)号：DE3852097D1
公开(公告)日：1994-12-15
申请号：DE3852097
申请日：1988-12-06
Applicant: IBM
IPC: H01J37/04 , H01J37/141 , H01J37/147 , H01J37/305 , H01L21/027 , H01J37/317
Abstract: A two stage, electron beam projection system includes a target, a source of an electron beam and means for projecting an electron beam towards the target with its upper surface defining a target plane. A magnetic projection lens has a principal plane and a back focal plane located between said means for projecting and the target. The means for projecting provides an electron beam directed towards the target. First stage means provides deflection of the beam from area to area within a field. Second stage means provides for deflection of the beam for providing deflection of the beam within an area within a field. The beam crossing the back focal plane produces a telecentric condition of the beam in the image plane with the beam substantially normal to tghe target plane from the principal plane to the target plane. The magnetic projection lens includes a magnetic structure providing for magnetic compensation positioned within the bore of the projection lens, which produces a compensating magnetic field substantially proportional to the first derivative of the axial magnetic projection field. The axial magnetic projection field provides substantially a zero first derivative of the axial magnetic projection field in the vicinity of the target. The projection system projects on the target plane from the projection system as deflected by the upper and lower stages, at all times maintaining the telecentric condition of the electron beam at the target plane throughout the entire range of deflection of the beam, assuring minimum errors due to target height variations.
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公开(公告)号：DE69432098T2
公开(公告)日：2003-10-23
申请号：DE69432098
申请日：1994-11-24
Applicant: IBM
Inventor： PFEIFFER HANS CHRISTIAN , STICKEL WERNER
IPC: G03F7/20 , H01J37/317 , H01L21/027 , H01J37/302 , H01J37/304 , H01J37/30
Abstract: An electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.
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公开(公告)号：CA2131670A1
公开(公告)日：1995-06-24
申请号：CA2131670
申请日：1994-09-08
Applicant: IBM
Inventor： PFEIFFER HANS C , STICKEL WERNER
IPC: G03F7/20 , H01J37/317 , H01L21/027
Abstract: An electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.
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公开(公告)号：DE3852097T2
公开(公告)日：1995-05-24
申请号：DE3852097
申请日：1988-12-06
Applicant: IBM
IPC: H01J37/04 , H01J37/141 , H01J37/147 , H01J37/305 , H01L21/027 , H01J37/317
Abstract: A two stage, electron beam projection system includes a target, a source of an electron beam and means for projecting an electron beam towards the target with its upper surface defining a target plane. A magnetic projection lens has a principal plane and a back focal plane located between said means for projecting and the target. The means for projecting provides an electron beam directed towards the target. First stage means provides deflection of the beam from area to area within a field. Second stage means provides for deflection of the beam for providing deflection of the beam within an area within a field. The beam crossing the back focal plane produces a telecentric condition of the beam in the image plane with the beam substantially normal to tghe target plane from the principal plane to the target plane. The magnetic projection lens includes a magnetic structure providing for magnetic compensation positioned within the bore of the projection lens, which produces a compensating magnetic field substantially proportional to the first derivative of the axial magnetic projection field. The axial magnetic projection field provides substantially a zero first derivative of the axial magnetic projection field in the vicinity of the target. The projection system projects on the target plane from the projection system as deflected by the upper and lower stages, at all times maintaining the telecentric condition of the electron beam at the target plane throughout the entire range of deflection of the beam, assuring minimum errors due to target height variations.
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公开(公告)号：DE3662827D1
公开(公告)日：1989-05-18
申请号：DE3662827
申请日：1986-08-29
Applicant: IBM
Inventor： CULLUM DOUGLAS G , GIUFFRE GEORGE J , GROVES TIMOTHY R , STICKEL WERNER , STURANS MARIS A
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