公开(公告)号：SG97196A1

公开(公告)日：2003-07-18

申请号：SG200106064

申请日：2001-09-28

Applicant: IBM

Inventor： DONALD F CANAPERI ,  JACK OON CHU ,  GUY COHEN ,  LIJUAN HUANG ,  JOHN ALBRECHT OTT ,  MICHAEL F LOFARO

IPC: H01L21/304 ,  B24B37/34 ,  B24B49/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/762 ,  H01L21/84

Abstract: A method and apparatus is described incorporating a semiconductor substrate, a CMP tool, a brush cleaning tool, and a chemical wafer cleaning tool. The CMP is performed with a down force of 1 psi, a backside air pressure of 0.5 psi, a platen speed of 50 rpm, a crarrier speed of 30 rpm and a slurry flow rate of 140 milliliters per minute.

公开(公告)号：GB2577416B

公开(公告)日：2022-03-09

申请号：GB201917374

申请日：2018-04-18

Applicant: IBM

Inventor： LIOR HORESH ,  RAYA HORESH ,  GUY COHEN ,  THEODORE VAN KESSEL ,  ROBERT LUKE WISNIEFF

IPC: B08B13/00 ,  B08B7/02

Abstract: Methods and systems for cleaning an optic include cleaning an optic with ultrasonic vibrations. The locations of nodes in a standing wave of the ultrasonic vibrations are changed by changing a frequency of vibration during cleaning.

公开(公告)号：GB2577416A

公开(公告)日：2020-03-25

申请号：GB201917374

申请日：2018-04-18

Applicant: IBM

Inventor： LIOR HORESH ,  RAYA HORESH ,  GUY COHEN ,  THEODORE VAN KESSEL ,  ROBERT LUKE WISNIEFF

IPC: G03B17/02

Abstract: Methods and systems for cleaning an optic include measuring a state of the optic. It is determined whether the optic needs to be cleaned based on the measured state of the optic. The optic is cleaned with ultrasonic vibrations if the optic needs to be cleaned.

公开(公告)号：SG103287A1

公开(公告)日：2004-04-29

申请号：SG200102828

申请日：2001-05-12

Applicant: IBM

Inventor： GUY COHEN ,  HON-SUM PHILIP WONG

IPC: H01L21/336 ,  H01L29/786 ,  H01L29/78

Abstract: A structure and method of manufacturing a double-gate integrated circuit which includes forming a laminated structure having a channel layer and first insulating layers on each side of the channel layer, forming openings in the laminated structure, forming drain and source regions in the openings, removing portions of the laminated structure to leave a first portion of the channel layer exposed, forming a first gate dielectric layer on the channel layer, forming a first gate electrode on the first gate dielectric layer, removing portions of the laminated structure to leave a second portion of the channel layer exposed, forming a second gate dielectric layer on the channel layer, forming a second gate electrode on the second gate dielectric layer, doping the drain and source regions, using self-aligned ion implantation, wherein the first gate electrode and the second gate electrode are formed independent of each other.