公开(公告)号：GB2510768A8

公开(公告)日：2014-08-20

申请号：GB201409117

申请日：2012-10-16

Applicant: IBM

Inventor： BANGSARUNTIP SARUNYA ,  GUY COHEN M ,  JEFFREY SLEIGHT W

IPC: H01L21/336 ,  B82Y10/00 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A field effect transistor device includes a nanowire, a gate stack comprising a gate dielectric layer disposed on the nanowire, a gate conductor layer disposed on the dielectric layer and a substrate, and an active region including a sidewall contact portion disposed on the substrate adjacent to the gate stack, the side wall contact portion is electrically in contact with the nanowire.