公开(公告)号：JP2003258126A

公开(公告)日：2003-09-12

申请号：JP2003031310

申请日：2003-02-07

Applicant: IBM

Inventor： CHEN TZE-CHIANG ,  HAN LIANG-KAI

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/08 ,  H01L27/092 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a protective structure for blocking the propagation of defects generated in a semiconductor device. SOLUTION: The protective structure is provided with a deep-trench isolation region 50 formed between a memory storing region 12 of the semiconductor device 10 and the logical operation circuit region 14 of the semiconductor device 10, while the deep-trench isolation region is filled with an insulation material. The deep-trench isolation region is formed below a shallow-trench isolation region 28 and the shallow-trench isolation region electrically separates a device included in the memory storage region 12 from a device included in the logical operation circuit region 14. According to this structure, the deep-trench isolation region blocks the propagation of crystalline defects generated in the logical operation circuit region into the memory storage region. COPYRIGHT: (C)2003,JPO