公开(公告)号：US3843954A

公开(公告)日：1974-10-22

申请号：US31996672

申请日：1972-12-29

Applicant: IBM

Inventor： HANSEN A ,  LANE R

IPC: G11C11/41 ,  G11C11/34 ,  G11C11/413 ,  G11C16/06 ,  G11C16/08 ,  G11C17/00 ,  G11C11/40

CPC classification number: G11C16/08

Abstract: A high-voltage integrated driver circuit for driving the word lines of a digital computer memory array of floating-gate avalanche-injection transistor memory cells, and for other applications where a high driving voltage is required. The disclosed driver circuit comprises a field-effect output transistor having a source electrode connected to a respective word line, a drain electrode adapted to have a chip select pulse signal applied thereto, and a gate electrode connected to selectably operable circuitry which may be conditioned either to a first state for clamping the voltage of the gate to cut off the output transistor and thereby maintain the output and the word line at a first voltage level, or to a second state for unclamping the voltage of the gate of the output transistor to permit the voltage of the output and the respective word line to swing with a high amplitude so as to cause the selected memory cell transistor to go into avalanche breakdown and thereby charge its floating gate so as to store a bit of information in the selected cell.

Abstract translation: 一种用于驱动浮动栅极雪崩注入晶体管存储单元的数字计算机存储器阵列的字线以及需要高驱动电压的其它应用的高压集成驱动电路。 所公开的驱动器电路包括具有连接到相应字线的源电极的场效应输出晶体管，适合于施加芯片选择脉冲信号的漏电极和连接到可选择可操作的电路的栅电极， 到第一状态，用于钳位栅极的电压以切断输出晶体管，从而将输出和字线保持在第一电压电平，或者将第二状态保持为第二状态，以解除输出晶体管的栅极的电压以允许 输出的电压和相应的字线以高幅度摆动，以使所选择的存储单元晶体管进入雪崩击穿，从而对其浮动栅极充电，以便在所选择的单元中存储一位信息。