1.
    发明专利
    未知

    公开(公告)号:DE68925810T2

    公开(公告)日:1996-09-26

    申请号:DE68925810

    申请日:1989-12-18

    Applicant: IBM

    Abstract: Apparatus and method for producing coherent blue-green-light radiation having a wavelength of essentially 490-500 nm. A diode laser (10), such as a strained-layer InGaAs/GaAs diode laser, provides a 980-1,000 nm beam (12), and a nonlinear crystal (19) of KTP (KTiOPO4) produces coherent radiation (22) by noncritically phase-matched second-harmonic generation (SHG) of said beam. The beam preferably has a wavelength of essentially 994 nm for generating radiation having a wavelength of essentially 497 nm. The crystal is disposed within an optical resonator (18) and the frequency of the laser is locked to that of the resonator. Alternatively, two diode lasers (10,11) are oriented to provide orthogonally polarized beams each with a wavelength of 980-1,000 nm but within essentially 1 nm of each other, and the KTP crystal is oriented with its a and c axes parallel to the orthogonally polarized beams. The KTP crystal may have an associated optical waveguide along which the beam is propagated to enhance SHG efficiency.

    Apparatus and method for producing blue-green light radiation

    公开(公告)号:HK203896A

    公开(公告)日:1996-11-15

    申请号:HK203896

    申请日:1996-11-07

    Applicant: IBM

    Abstract: Apparatus and method for producing coherent blue-green-light radiation having a wavelength of essentially 490-500 nm. A diode laser (10), such as a strained-layer InGaAs/GaAs diode laser, provides a 980-1,000 nm beam (12), and a nonlinear crystal (19) of KTP (KTiOPO4) produces coherent radiation (22) by noncritically phase-matched second-harmonic generation (SHG) of said beam. The beam preferably has a wavelength of essentially 994 nm for generating radiation having a wavelength of essentially 497 nm. The crystal is disposed within an optical resonator (18) and the frequency of the laser is locked to that of the resonator. Alternatively, two diode lasers (10,11) are oriented to provide orthogonally polarized beams each with a wavelength of 980-1,000 nm but within essentially 1 nm of each other, and the KTP crystal is oriented with its a and c axes parallel to the orthogonally polarized beams. The KTP crystal may have an associated optical waveguide along which the beam is propagated to enhance SHG efficiency.

    MINIATURE BLUE-GREEN LASER SOURCE USING SECOND-HARMONIC GENERATION

    公开(公告)号:AU626964B2

    公开(公告)日:1992-08-13

    申请号:AU4778690

    申请日:1990-01-08

    Applicant: IBM

    Abstract: Apparatus and method for producing coherent blue-green-light radiation having a wavelength of essentially 490-500 nm. A diode laser (10), such as a strained-layer InGaAs/GaAs diode laser, provides a 980-1,000 nm beam (12), and a nonlinear crystal (19) of KTP (KTiOPO4) produces coherent radiation (22) by noncritically phase-matched second-harmonic generation (SHG) of said beam. The beam preferably has a wavelength of essentially 994 nm for generating radiation having a wavelength of essentially 497 nm. The crystal is disposed within an optical resonator (18) and the frequency of the laser is locked to that of the resonator. Alternatively, two diode lasers (10,11) are oriented to provide orthogonally polarized beams each with a wavelength of 980-1,000 nm but within essentially 1 nm of each other, and the KTP crystal is oriented with its a and c axes parallel to the orthogonally polarized beams. The KTP crystal may have an associated optical waveguide along which the beam is propagated to enhance SHG efficiency.

    4.
    发明专利
    未知

    公开(公告)号:DE3681164D1

    公开(公告)日:1991-10-02

    申请号:DE3681164

    申请日:1986-06-18

    Applicant: IBM

    Abstract: Optoelectronic voltage-controlled modulator for the external modulation of a light beam comprises: semiconductor substrate (31); reflector (33) comprising an epitaxial layered structure; and an absorber (34) comprising an epitaxial structure grown on the reflector, such that the intensity of the beam (L) passing through the absorber before and after being reflected can be modulated by means of electric control signals applied to contacts (37,39) connecting to the modulator structure.

    6.
    发明专利
    未知

    公开(公告)号:DE68925810D1

    公开(公告)日:1996-04-04

    申请号:DE68925810

    申请日:1989-12-18

    Applicant: IBM

    Abstract: Apparatus and method for producing coherent blue-green-light radiation having a wavelength of essentially 490-500 nm. A diode laser (10), such as a strained-layer InGaAs/GaAs diode laser, provides a 980-1,000 nm beam (12), and a nonlinear crystal (19) of KTP (KTiOPO4) produces coherent radiation (22) by noncritically phase-matched second-harmonic generation (SHG) of said beam. The beam preferably has a wavelength of essentially 994 nm for generating radiation having a wavelength of essentially 497 nm. The crystal is disposed within an optical resonator (18) and the frequency of the laser is locked to that of the resonator. Alternatively, two diode lasers (10,11) are oriented to provide orthogonally polarized beams each with a wavelength of 980-1,000 nm but within essentially 1 nm of each other, and the KTP crystal is oriented with its a and c axes parallel to the orthogonally polarized beams. The KTP crystal may have an associated optical waveguide along which the beam is propagated to enhance SHG efficiency.

    7.
    发明专利
    未知

    公开(公告)号:BR9000115A

    公开(公告)日:1990-10-23

    申请号:BR9000115

    申请日:1990-01-12

    Applicant: IBM

    Abstract: Apparatus and method for producing coherent blue-green-light radiation having a wavelength of essentially 490-500 nm. A diode laser (10), such as a strained-layer InGaAs/GaAs diode laser, provides a 980-1,000 nm beam (12), and a nonlinear crystal (19) of KTP (KTiOPO4) produces coherent radiation (22) by noncritically phase-matched second-harmonic generation (SHG) of said beam. The beam preferably has a wavelength of essentially 994 nm for generating radiation having a wavelength of essentially 497 nm. The crystal is disposed within an optical resonator (18) and the frequency of the laser is locked to that of the resonator. Alternatively, two diode lasers (10,11) are oriented to provide orthogonally polarized beams each with a wavelength of 980-1,000 nm but within essentially 1 nm of each other, and the KTP crystal is oriented with its a and c axes parallel to the orthogonally polarized beams. The KTP crystal may have an associated optical waveguide along which the beam is propagated to enhance SHG efficiency.

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