公开(公告)号：JP2000208779A

公开(公告)日：2000-07-28

申请号：JP37312699

申请日：1999-12-28

Applicant: IBM

Inventor： HARGROVE MICHAEL J ,  MARIO M PERERA ,  STEPHEN H WOHLDMAN

IPC: H01L21/8238 ,  H01L21/336 ,  H01L21/822 ,  H01L23/52 ,  H01L23/58 ,  H01L27/02 ,  H01L27/04 ,  H01L27/092 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide an SOI field effect transistor structure for providing ESD protection. SOLUTION: This structure includes a source 20, a drain 22, a body 24 and a gate. The gate is formed of a thick-film oxide layer 26 and a metal contact 30. The gate is formed during a BEOL process. A p-type or an n-type transistor may be used as the transistor. The drain 22 of the transistor may be connected to either a gate 30 or a body 24, or both the gate 30 and the body 24. When this field effect transistor is used as a protective device, the drain is connected to a signal pad and a source is connected to a standard electric potential.

公开(公告)号：MY121158A

公开(公告)日：2005-12-30

申请号：MYPI20003023

申请日：2000-07-03

Applicant: IBM

Inventor： HARGROVE MICHAEL J ,  MANDELMAN JACK A

IPC: H01L21/28 ,  H01L27/01 ,  H01L21/768 ,  H01L23/522 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: A STRUCTURE AND PROCESS FOR MAKING A SEMICONDUCTOR DEVICE WITH SOI BODY CONTACTS UNDER THE GATE CONDUCTOR.THE GATE CONDUCTER IS PARTITIONED INTO SEGMENTS AND PROVIDES A BODY CONTACT UNDER EACH GATE CONDUCTER SEGMENT OVER THE WIDTH OF THE DEVICE. A PLURALITY OF BODY CONTACTS MAY BE DISTRIBUTED ACROSS THE LENGTH OF THE GATE CONDUCTER.THIS RESULTS IN A RELATIVELY SHORT PATH FOR HOLES LEAVING THE BODY TO TRAVERSE AND ALLOWS ACCUMULATED CHARGE TO BE REMOVED FROM THE BODY REGION UNDER THE GATE.THE STRUCTURE PROVIDES FOR STABLE AND EFFICIENT BODY-CONTACT OPERATION FOR SOI MOSFETS OF ANY WIDTH OPERATING AT HIGH SPEEDS.FIG. 13