公开(公告)号：JP2000208779A

公开(公告)日：2000-07-28

申请号：JP37312699

申请日：1999-12-28

Applicant: IBM

Inventor： HARGROVE MICHAEL J ,  MARIO M PERERA ,  STEPHEN H WOHLDMAN

IPC: H01L21/8238 ,  H01L21/336 ,  H01L21/822 ,  H01L23/52 ,  H01L23/58 ,  H01L27/02 ,  H01L27/04 ,  H01L27/092 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide an SOI field effect transistor structure for providing ESD protection. SOLUTION: This structure includes a source 20, a drain 22, a body 24 and a gate. The gate is formed of a thick-film oxide layer 26 and a metal contact 30. The gate is formed during a BEOL process. A p-type or an n-type transistor may be used as the transistor. The drain 22 of the transistor may be connected to either a gate 30 or a body 24, or both the gate 30 and the body 24. When this field effect transistor is used as a protective device, the drain is connected to a signal pad and a source is connected to a standard electric potential.