公开(公告)号：JPH10289949A

公开(公告)日：1998-10-27

申请号：JP9198298

申请日：1998-04-03

Applicant: IBM

Inventor： CRONIN JOHN E ,  HARTSWICK THOMAS J ,  STAMPER ANTHONY K

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To facilitate mutual connection between a connecting wire and a mutual connection stud by using a sidewall spacer on the side face of the connecting wire for widening the contact area between the connecting wire and the connection stud. SOLUTION: A semiconductor part 100 has a connection stud 102 connecting the first connecting wire 104 to the second connecting wire 106. The first connecting wire 104 and the second connecting wire 106 and made of a metallic conductor in high conductivity. A substitute conductive path is formed between the first connecting wire 104 and the mutual connection stud 102 by a sidewall spacer 2 added to the first connecting wire 104 before an insulator is bonded. Especially, the side wall 22 comes into contact with a Ti/TiN layer 108 along the outer side thereof. Furthermore, the connection stud 102 is connected to the sidewall spacer 122 which is further connected to the first connecting wire 104. Accordingly, the sidewall spacer 122 is connected to the first connecting wire 104 along the whole sidewall thereof.

公开(公告)号：SG63828A1

公开(公告)日：1999-03-30

申请号：SG1998000565

申请日：1998-03-14

Applicant: IBM

Inventor： CRONIN JOHN E ,  HARTSWICK THOMAS J ,  STAMPER ANTHONY K

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/535 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L27/01

Abstract: The preferred embodiment of the present invention provides increased conductivity between interlevel interconnection lines. The preferred embodiment uses sidewall spacers on the sides of the interconnection lines to increase the contact area between interconnection lines and interconnect studs. This increase in area improves connection resistance and allows further device scaling without unacceptable decreases in the conductivity of the connection, and without adding significant expense in the fabrication process.

公开(公告)号：MY117252A

公开(公告)日：2004-06-30

申请号：MYPI9800951

申请日：1998-03-04

Applicant: IBM

Inventor： CRONIN JOHN E ,  HARTSWICK THOMAS J ,  STAMPER ANTHONY K

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/42 ,  H01L23/522 ,  H01L23/532 ,  H01L27/01 ,  H01L29/40

Abstract: THE PREFERRED EMBODIMENT OF THE PRESENT INVENTION PROVIDES INCREASED CONDUCTIVITY BETWEEN INTERLEVEL INTERCONNECTION LINES (104, 304, 521). THE PREFERRED EMBODIMENT USES SIDEWALL SPACERS (120, 122,320,322,520, 522) ON THE SIDES OF THE INTERCONNECTION LINES TO INCREASE THE CONTACT AREA BETWEEN INTERCONNECTION LINES AND INTERCONNECT STUDS (102). THIS INCREASE IN AREA IMPROVES CONNECTION RESISTANCE AND ALLOWS FURTHER DEVICE SCALING WITHOUT UNACCEPTABLE DECREASES IN THE CONDUCTIVITY OF THE CONNECTION, AND WITHOUT ADDING SIGNIFICANT EXPENSE IN THE FABRICATION PROCESS.