公开(公告)号：IN188341B

公开(公告)日：2002-09-07

申请号：IN416MA1995

申请日：1995-04-05

Applicant: IBM

Inventor： UMEMOTO KAZUHIRO ,  HAYASHIDA SUMITO

IPC: H01L21/00 ,  H01L23/00

公开(公告)号：MY130161A

公开(公告)日：2007-06-29

申请号：MYPI9500813

申请日：1995-03-30

Applicant: IBM

Inventor： HAYASHIDA SUMITO ,  UMEMOTO KAZUHIRO

IPC: H01L23/02 ,  H01L23/28 ,  H01L23/31 ,  H01L23/373 ,  H01L23/433

Abstract: THE SURFACE OF A HEAT SINK (22) IS HYDROXYLATED BY IMMERSING THE HEAT SINK (22) IN ALKALI SOLUTION, CLEANING WITH WATER AND DRYING. THEREAFTER, A DILUTED SILANE COUPLING AGENT IS APPLIED TO THE SURFACE OF THE HEAT SINK (22), AND THE HEAT SINK (22) IS DRIED, FORMING A LAYER (A) OF THE SILANE COUPLING AGENT ON THE SURFACE OF THE HEAT SINK (22). THEN, A CHIP (12) CARRIED BY THE DIE PAD (16) AND LEAD FRAMES (18), CONNECTED TO THE CHIP (12) WITH WIRES (20) ARE PLACED IN A MOULDING DIE. THE HEAT SINK (22) IS ALSO PLACED IN THE SAME DIE. THE SYSTEM IS THEN CAST IN A MOULD RESIN TO FORM A SEMICONDUCTOR PACKAGE (10).(FIG. 1)

公开(公告)号：SG72596A1

公开(公告)日：2000-05-23

申请号：SG1995000358

申请日：1995-04-28

Applicant: IBM

Inventor： UMEMOTO KAZUHIRO ,  HAYASHIDA SUMITO

IPC: H01L23/28 ,  H01L23/31 ,  H01L23/373 ,  H01L23/433 ,  H01L23/42

Abstract: A heat sink 22 is hydroxulated by degreasing with alkali, cleaning with water and drying, Thereafter, a diluted silane coupling agent is applied to the surface of the heat sink 22, and the heat sink 22 is dried to form a layer A of the silane coupling agent on the surface of the heat sink 22, Then, a chip 12 carried by the die pad 16 and lead frames 18 connected to the chip 12 with wires 20 are placed in the die, the heat sink 22 is placed in the same die, and the system is moulded to form a semiconductor packaging 10. In this manner, heat dissipation characteristics are maintained while reducing manufacturing costs.