公开(公告)号：SG99845A1

公开(公告)日：2003-11-27

申请号：SG1998000852

申请日：1998-04-23

Applicant: IBM

Inventor： HORMAZDYAR MINOCHER DALAL ,  DU BINH NGUYEN ,  HAZARA SINGH RATHORE

IPC: H01L21/768 ,  H01L21/28 ,  H01L23/522

Abstract: The present invention relates to the field of semiconductor manufacturing, and more specifically to methods of forming sub-half-micron multi-level interconnect structures for integrated circuits. The inventive structure and process are spike free and that has resulted in improved circuit performance, reliability and process yields. The inventive structure and process have a plurality of insulator layers where each of the adjoining insulator layers are of a different material.