公开(公告)号：EP0099878A4

公开(公告)日：1985-10-01

申请号：EP82900597

申请日：1981-12-31

Applicant: IBM

Inventor： CHYE PATRICK W ,  HEARN ERIC W ,  KULKARNI MURLIDHAR V ,  MARKOVITS GARY

IPC: H01L21/322 ,  H01L21/324 ,  F27D5/00 ,  F27D7/00 ,  F27D13/00 ,  H01L29/00

CPC classification number: H01L21/3225

Abstract: The rate of oxygen precipitation in a semiconductor wafer during heat treatment is reduced by quickly inserting the wafer into a furnace which has been preheated to the heat treatment temperature. After performing the heat treatment, the wafer is slowly cooled to prevent warpage or cracking.

公开(公告)号：DE3177017D1

公开(公告)日：1989-04-27

申请号：DE3177017

申请日：1981-12-31

Applicant: IBM

Inventor： CHYE PATRICK W ,  HEARN ERIC W ,  KULKARNI MURLIDHAR V ,  MARKOVITS GARY

IPC: H01L21/322 ,  H01L21/324 ,  F27D5/00 ,  F27D7/00 ,  F27D13/00 ,  H01L29/00 ,  C30B33/00

Abstract: PCT No. PCT/US81/01777 Sec. 371 Date Mar. 10, 1982 Sec. 102(e) Date Mar. 10, 1982 PCT Filed Dec. 31, 1981 PCT Pub. No. WO83/02314 PCT Pub. Date Jul. 7, 1983.The rate of oxygen precipitation in a semiconductor wafer during heat treatment is reduced by quickly inserting the wafer into a furnace which has been preheated to the heat treatment temperature. After performing the heat treatment, the wafer is slowly cooled to prevent warpage or cracking.