公开(公告)号：EP0099878A4

公开(公告)日：1985-10-01

申请号：EP82900597

申请日：1981-12-31

Applicant: IBM

Inventor： CHYE PATRICK W ,  HEARN ERIC W ,  KULKARNI MURLIDHAR V ,  MARKOVITS GARY

IPC: H01L21/322 ,  H01L21/324 ,  F27D5/00 ,  F27D7/00 ,  F27D13/00 ,  H01L29/00

CPC classification number: H01L21/3225

Abstract: The rate of oxygen precipitation in a semiconductor wafer during heat treatment is reduced by quickly inserting the wafer into a furnace which has been preheated to the heat treatment temperature. After performing the heat treatment, the wafer is slowly cooled to prevent warpage or cracking.

公开(公告)号：DE3279291D1

公开(公告)日：1989-01-19

申请号：DE3279291

申请日：1982-02-02

Applicant: IBM

Inventor： ELLIOT BRIAN JOHN ,  HEARN ERIC WHITE ,  MARKOVITS GARY

IPC: H01L21/66 ,  G01N27/04 ,  H01L21/322 ,  H01L21/324 ,  H01L29/167

Abstract: A method or technique is disclosed for predicting where oxygen precipitation will occur in semiconductor wafers that are being processed in connection with integrated circuit manufacture; the technique is based upon the discovery that such precipitation will occur at resistivity peaks measured prior to any thermal treatment of the wafers. In other words, the technique permits characterizing the wafers by the diametral resistivity profile that is obtained in the initial resistivity measurements, whereby a change in oxygen precipitation can be predicted where compensated intrinsic regions have been measured in the initial measurements.

公开(公告)号：DE3176292D1

公开(公告)日：1987-08-06

申请号：DE3176292

申请日：1981-03-19

Applicant: IBM

Inventor： EDMONDS HAROLD DONALD ,  MARKOVITS GARY

IPC: H05K3/46 ,  H01B3/12 ,  H01L23/15 ,  H01L23/538 ,  H05K1/03 ,  H01L23/14 ,  H01L23/54

Abstract: A multi-layer substrate (30) comprises a matrix of sintered silicon particles (27) joined by a thin insulating layer (29) of a silicon compound, e.g. silicon dioxide or silicon nitride. Semiconductor circuit chips (14) are bonded to the surface of the substrate (30) to form an electrically connected, unitary integrated circuit module structure.

公开(公告)号：DE3062559D1

公开(公告)日：1983-05-11

申请号：DE3062559

申请日：1980-01-09

Applicant: IBM

Inventor： EDMONDS HAROLD DONALD ,  LYONS VINCENT JAMES ,  MARKOVITS GARY

IPC: H01L21/52 ,  B28D1/00 ,  B28D5/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/78 ,  H01L23/492 ,  H01L21/70

公开(公告)号：DE2860307D1

公开(公告)日：1981-02-19

申请号：DE2860307

申请日：1978-10-23

Applicant: IBM

Inventor： EDMONDS HAROLD DONALD ,  MARKOVITS GARY

IPC: B24B7/22 ,  H01L21/304 ,  H01L21/322 ,  H01L21/18

公开(公告)号：DE3177017D1

公开(公告)日：1989-04-27

申请号：DE3177017

申请日：1981-12-31

Applicant: IBM

Inventor： CHYE PATRICK W ,  HEARN ERIC W ,  KULKARNI MURLIDHAR V ,  MARKOVITS GARY

IPC: H01L21/322 ,  H01L21/324 ,  F27D5/00 ,  F27D7/00 ,  F27D13/00 ,  H01L29/00 ,  C30B33/00

Abstract: PCT No. PCT/US81/01777 Sec. 371 Date Mar. 10, 1982 Sec. 102(e) Date Mar. 10, 1982 PCT Filed Dec. 31, 1981 PCT Pub. No. WO83/02314 PCT Pub. Date Jul. 7, 1983.The rate of oxygen precipitation in a semiconductor wafer during heat treatment is reduced by quickly inserting the wafer into a furnace which has been preheated to the heat treatment temperature. After performing the heat treatment, the wafer is slowly cooled to prevent warpage or cracking.

公开(公告)号：DE2860935D1

公开(公告)日：1981-11-12

申请号：DE2860935

申请日：1978-07-10

Applicant: IBM

Inventor： MARKOVITS GARY

IPC: G01N27/26 ,  G01N27/42 ,  G01R31/302 ,  H01L21/66 ,  G01R31/28

Abstract: A non-destructive method of mapping damage sites in the surface of a semiconductor article, such as a silicon wafer, establishes an interface between the semiconductor and a dilute acid electrolyte. The semiconductor article is negatively biased with respect to the electrolyte and the semiconductor surface is evenly illuminated. The biasing voltage and the illumination intensity are chosen such that small hydrogen bubbles, which stick to the surface of the semiconductor article, are produced at the damage sites. The locations of the bubbles are detected and recorded.