Abstract:
A magneto-optical memory element for use as a light beam addressable memory element is formed of permalloy and europium oxide films arranged in adjoining layers. Information is written into the permalloy layer while the device is at room temperature. The ambient temperature is then reduced below the Curie point of europium oxide causing the magnetization of the permalloy layer to be directly transferred by negative or anti-parallel exchange coupling to the europium oxide layer. The europium oxide then preserves the stored information in a form suitable for optical read-out which will take place at this low temperature. The device has the advantage that if the ambient temperature accidentally should rise above the Curie point of europium oxide going even as high as room temperature, the stored information will be preserved in the permalloy film until the temperature again is brought below the Curie point of europium oxide. Whereupon the europium oxide film is restored to its previous magnetic state by negative exchange coupling. Thus, the subject magneto-optical memory device is nonvolatile under fluctuating temperature conditions.
Abstract:
An integrated magneto-resistive sensor for detection of magnetic bubble domains. The sensor is located on the chip in which the bubble domains propagate and can be an integral part of the propagation circuitry. Any material exhibiting a magnetoresistive effect can be used, and permalloy is a preferred material. The sensing element can be made very small, and has a length which is usually about equal to a bubble domain diameter.
Abstract:
A two-phase conductor means for propagation of cylindrical magnetic domains (bubble domains) in an underlying magnetic medium, such as orthoferrite or garnet. By pulsing parallel conductors alternately with bi-polar pulses, propagation of domains in the magnetic material is achieved. Very small domains can be used with these conductors and fabrication is more simple than with conventional conductor loops. A bi-directional shift register having four conductors (connected in pairs) per stage is shown.
Abstract:
CONTIGUOUS ELEMENT FIELD ACCESS BUBBLE LATTICE FILE A bubble domain storage system is described which has the best features of contiguous element bubble propagation systems and bubble lattice file systems. An array of magnetic bubble domains, such as a lattice, is moved along contiguous propagation patterns in response to the reorientation of a magnetic field in the plane of the bubble domain film. Adjacent rows of bubble domains in the array move in opposite directions to provide individual storage loops within the array. Information accessing can be achieved by the use of input/output registers similar to those used in other contiguous disk bubble domain storage systems. For example, the storage system can be a conventional major/minor loop organization using contiguous element propagation patterns for the storage registers and for the input/output registers. Every bit position in the storage registers is populated by a bubble domain where the average distance between adjacent bubble domains is less than that in a system where bubbles are isolated from one another. For example, the storage registers can be arranged so that the separation between adjacent bubble domains in the storage registers is 2-3 bubble diameters. The bubbles are coded in terms of the magnetic properties of individual bubble domains, or a double layer structure can be used in which an array of bubble domains is in one layer and information bubble domains are in the other layer, coded in accordance with presence/ absence. Viewed another way, the invention is a bubble storage system using contiguous propagation elements which is fully populated by interacting bubble domains. YO977-032 -1-
Abstract:
The magnetic bubble domain memory includes a transfer device for transferring domains from a first register to a second register, or back to the first register. The transfer device includes at least one Y shaped magnetic element, with one transfer path defined by both arms of the Y and the other transfer path defined by one arm and the stem of the Y. A conductor crosses the transfer path along the stem of the Y, with current selectively passed through the the conductor to determine the transfer path. The magnetic element comprises a soft magnetic layer, with the conductor between this and the magnetic support containing the domains.
Abstract:
METHOD FOR MAKING HIGH DENSITY MAGNETIC BUBBLE DOMAIN SYSTEM A method for making a high density magnetic bubble domain system including the functions of read, write, storage, transfer, and annihilation. Only three masking steps are required, of which only one requires critical alignment. The process makes use of the fact that magnetic disks can be placed on non ion implanted regions without adversely affecting the propagation properties of the implanted regions. Thus, the magnetic disks can be used to define ion implantation masks as well as for providing functions such as generation, propagation, reading, and annihilation. Magnetic elements for generation, storage and propagation, reading and annihilation are deposited in the same non-critical masking step, while all conductors used for writing, reading, and transfer are deposited by a single masking step requiring critical alignment.
Abstract:
A bubble domain storage system is described which has the best features of contiguous element bubble propagation systems and bubble lattice file systems. An array of magnetic bubble domains, such as a lattice, is moved along contiguous propagation patterns in response to the reorientation of a magnetic field in the plane of the bubble domain film. Adjacent rows of bubble domains in the array move in opposite directions to provide individual storage loops within the array. Information accessing can be achieved by the use of input/output registers similar to those used in other contiguous disk bubble domain storage systems. For example, the storage system can be a conventional major/minor loop organization using contiguous element propagation patterns for the storage registers and for the input/output registers. Every bit position in the storage registers is populated by a bubble domain where the average distance between adjacent bubble domains is less than that in a system where bubbles are isolated from one another. For example, the storage registers can be arranged so that the separation between adjacent bubble domains in the storage registers is 2-3 bubble diameters. The bubbles are coded in terms of the magnetic properties of individual bubble domains, or a double layer structure can be used in which an array of bubble domains is in one layer and information bubble domains are in the other layer, coded in accordance with presence/absence. Viewed another way, the invention is a bubble storage system using contiguous propagation elements which is fully populated by interacting bubble domains.