公开(公告)号：JP2005268802A

公开(公告)日：2005-09-29

申请号：JP2005077513

申请日：2005-03-17

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： STEPHEN S FURKAY ,  HENDRICK HAMANN ,  JOHNSON JEFFREY B ,  LAM CHUNG H ,  HON-SUM P WONG

IPC: G11C13/00 ,  G11C11/56 ,  H01L21/06 ,  H01L21/331 ,  H01L27/10 ,  H01L27/105 ,  H01L27/12 ,  H01L27/24 ,  H01L29/00 ,  H01L29/68 ,  H01L45/00

CPC classification number: H01L29/685 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/1203

Abstract: PROBLEM TO BE SOLVED: To provide a memory structure in which electric characteristics are controlled by indirectly heating a phase change material. SOLUTION: A manufacturing method of a memory device of a phase change material and a phase change memory device prepared by the method thereof are included. Concretely, the phase change memory device contains a semiconductor structure, and the semiconductor structure includes a substrate where a first doped area is contained and a set of second doped areas are disposed at both ends thereof; the phase change material disposed on the first doped area; and a conductor disposed on the phase change material. The semiconductor structure is operated as a bipolar junction transistor when the phase change material is in a first phase, and the semiconductor structure is operated as a MOSFET when the phase change material is in a second phase. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供通过间接加热相变材料来控制电特性的存储结构。 解决方案：包括通过其方法制备的相变材料的存储器件和相变存储器件的制造方法。 具体地说，相变存储器件包含半导体结构，并且半导体结构包括其两端包含第一掺杂区的基片和一组第二掺杂区; 所述相变材料设置在所述第一掺杂区域上; 以及配置在相变材料上的导体。 当相变材料处于第一相位时，半导体结构作为双极结型晶体管工作，当相变材料处于第二相时，半导体结构作为MOSFET工作。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：GB2541525B

公开(公告)日：2018-07-04

申请号：GB201611888

申请日：2016-07-08

Applicant: IBM

Inventor： ROLAND NAGY ,  LEVENTE KLEIN ,  HENDRICK HAMANN ,  SUKJAY CHEY ,  SIYUAN LU

IPC: G01N27/12

公开(公告)号：GB2541525A

公开(公告)日：2017-02-22

申请号：GB201611888

申请日：2016-07-08

Applicant: IBM

Inventor： ROLAND NAGY ,  LEVENTE KLEIN ,  HENDRICK HAMANN ,  SUKJAY CHEY ,  SIYUAN LU

IPC: G01N27/12 ,  G01N27/16 ,  G01N33/00

Abstract: A gas sensing device 10 comprises a dielectric substrate 16, a heater 18 integrated into the substrate, an insulating dielectric 12 formed over the heater, a gas sensing layer 14, contacts 26 formed on the sensing layer, and a noble material 24 formed on a portion of the sensing layer between the contacts to act as an ionising catalyst such that upon heating to a temperature adsorption of a specific gas changes electronic properties of the sensing layer to permit detection of the gas. The device may have a plurality of different noble metals 24 to sense different gases. A calibration system includes a gas sensing device mounted on a substrate, a gas canister for storing a calibration gas and an injector for enabling local gas release for calibrating the sensor.