公开(公告)号：JP2005294827A

公开(公告)日：2005-10-20

申请号：JP2005085734

申请日：2005-03-24

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： FOGEL KEITH E ,  BALARAM GHOSAL ,  SUNG K KANG ,  STEPHEN KILPATRICK ,  PAUL A LAURO ,  HENRY A NYE III ,  DA-YUAN SHIH ,  DONNA S ZUPANSKI-NIELSEN

IPC: H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H05K3/34

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To provide a ball-limiting metallurgy (BLM) structure for flip chip connection, which is suitable for use together with a lead-free solder. SOLUTION: An interconnection structure suitable for flip chip connection of microelectronic device chips to packages has a two-, three- or four-layer ball-limiting composition. The composition includes an adhesion/reaction barrier layer and has a solder wettable layer reactive with components of a tin-containing lead-free solder. The solderable layer can be therefore totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead-free solder during soldering. One or more lead-free solder balls are selectively positioned on the solder wettable layer. The lead-free solder balls comprise tin as a main component and one or more alloying components. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供适合与无铅焊料一起使用的倒装芯片连接用的限界冶金（BLM）结构。 解决方案：适用于微电子器件芯片与封装的倒装芯片连接的互连结构具有二，三或四层球限制组合物。 该组合物包括粘合/反应阻挡层，并且具有与含锡无铅焊料的组分反应的焊料可湿性层。 因此可焊接层在焊接时可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊球选择性地定位在焊料可润湿层上。 无铅焊球包括锡作为主要成分和一种或多种合金成分。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：SG91328A1

公开(公告)日：2002-09-17

申请号：SG200100288

申请日：2001-01-17

Applicant: IBM

Inventor： HENRY A NYE III ,  VINCENT J MCGAHAY ,  KURT A TALLMAN

IPC: H01L21/3205 ,  H01L23/52 ,  H01L21/768 ,  H01L21/77 ,  H01L23/00 ,  H01L23/58 ,  H01L21/02

Abstract: A copper-interconnect, low-K dielectric integrated circuit has reduced corrosion of the interconnect when the crackstop next to the kerf is also used as the primacy barrier to oxygen diffusion through the dielectric, with corresponding elements of the crackstop being constructed simultaneously with the circuit interconnect elements; e.g. horizontal interconnect elements have a corresponding structure in the crackstop and vias between interconnect layers have corresponding structures in the crackstop.

公开(公告)号：SG93853A1

公开(公告)日：2003-01-21

申请号：SG1999006302

申请日：1999-12-09

Applicant: IBM

Inventor： VINCENT J MCGAHAY ,  THOMAS H IVERS ,  HENRY A NYE III ,  JOYCE C LUI

IPC: H01L21/3205 ,  H01L21/28 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

Abstract: Poorly adherent layers such as silicon nitride and silicon dioxide exhibit improved adhesion to copper member by providing an intervening germanium-containing layer. The germanium-containing layer is copper germanide, germanium oxide, germanium nitride or combinations thereof. The germanium-containing layer enhances the adhesion such that the poorly adherent layer is less susceptible to delamination from the copper member.