公开(公告)号：SG91328A1

公开(公告)日：2002-09-17

申请号：SG200100288

申请日：2001-01-17

Applicant: IBM

Inventor： HENRY A NYE III ,  VINCENT J MCGAHAY ,  KURT A TALLMAN

IPC: H01L21/3205 ,  H01L23/52 ,  H01L21/768 ,  H01L21/77 ,  H01L23/00 ,  H01L23/58 ,  H01L21/02

Abstract: A copper-interconnect, low-K dielectric integrated circuit has reduced corrosion of the interconnect when the crackstop next to the kerf is also used as the primacy barrier to oxygen diffusion through the dielectric, with corresponding elements of the crackstop being constructed simultaneously with the circuit interconnect elements; e.g. horizontal interconnect elements have a corresponding structure in the crackstop and vias between interconnect layers have corresponding structures in the crackstop.

公开(公告)号：SG101957A1

公开(公告)日：2004-02-27

申请号：SG200100731

申请日：2001-02-10

Applicant: IBM

Inventor： CHARLES R DAVIS ,  DANIEL CHARLES EDELSTEIN ,  JOHN C HAY ,  JEFFREY C HENDRICK ,  CHRISTOPHER JAHNES ,  VINCENT J MCGAHAY

IPC: H01L21/768 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: A multi-level, coplanar copper damascene interconnect structure on an integrated circuit chip includes a first planar interconnect layer on an integrated circuit substrate and having plural line conductors separated by a dielectric material having a relatively low dielectric constant and a relatively low elastic modulus. A second planar interconnect layer on the first planar interconnect layer comprises a dielectric film having an elastic modulus higher than in the first planar interconnect layer and conductive vias therethrough. The vias are selectively in contact with the line conductors. A third planar interconnect layer on the second planar interconnect layer has plural line conductors separated by the dielectric material and selectively in contact with the vias.

公开(公告)号：SG93853A1

公开(公告)日：2003-01-21

申请号：SG1999006302

申请日：1999-12-09

Applicant: IBM

Inventor： VINCENT J MCGAHAY ,  THOMAS H IVERS ,  HENRY A NYE III ,  JOYCE C LUI

IPC: H01L21/3205 ,  H01L21/28 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

Abstract: Poorly adherent layers such as silicon nitride and silicon dioxide exhibit improved adhesion to copper member by providing an intervening germanium-containing layer. The germanium-containing layer is copper germanide, germanium oxide, germanium nitride or combinations thereof. The germanium-containing layer enhances the adhesion such that the poorly adherent layer is less susceptible to delamination from the copper member.