公开(公告)号：US3473976A

公开(公告)日：1969-10-21

申请号：US3473976D

申请日：1966-03-31

Applicant: IBM

Inventor： CASTRUCCI PAUL P ,  HESS MARTIN S ,  PECORARO RAYMOND P

IPC: H01L21/00 ,  H01L21/316 ,  H01L21/761 ,  H01L21/82 ,  H01L27/07 ,  H01L7/36

CPC classification number: H01L27/0761 ,  H01L21/00 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/761 ,  H01L21/82 ,  H01L27/0755 ,  Y10S148/037 ,  Y10S148/049 ,  Y10S148/05 ,  Y10S148/062 ,  Y10S148/115

公开(公告)号：US3585464A

公开(公告)日：1971-06-15

申请号：US3585464D

申请日：1967-10-19

Applicant: IBM

Inventor： CASTRUCCI PAUL P ,  HESS MARTIN S ,  MAHERAS GEORGE ,  NORTH WILLIAM D ,  GROCHOWSKI EDWARD G

IPC: H01L21/822 ,  H01L21/331 ,  H01L21/74 ,  H01L21/8222 ,  H01L27/00 ,  H01L27/04 ,  H01L29/04 ,  H01L29/73 ,  H01L19/00

CPC classification number: H01L29/045 ,  H01L21/74 ,  H01L21/8222 ,  H01L27/00 ,  Y10S148/037 ,  Y10S148/049 ,  Y10S148/085 ,  Y10S148/115 ,  Y10S438/91 ,  Y10S438/973

Abstract: A semiconductor device and a method for fabricating the same which is composed of a monocrystalline semiconductor body having a surface crystallographic orientation substantially parallel to a plane and having a PN junction formed in the body. The body has an insulator coating, such as silicon dioxide, over the PN junction. The surface state density at the semiconductorinsulator interface is very low. This low density is believed to be a reason for the increased beta in the oriented material semiconductor device. Further, the device has a low defect density and few dopant precipitate sites even at high dopant levels. A monolithic integrated circuit structure composed of the monocrystalline semiconductor substrate having a surface crystallographic orientation substantially parallel to a plane with a plurality of semiconductor devices within the substrate is described. The devices are isolated from one another by PN junctions. The tolerance in a given isolated device, between the PN junction and the nearest region having a different conductivity is less than approximately 0.3 mils. This very close spacing allows substantially greater compactness of semiconductor devices within a monocrystalline semiconductor body than has ever been previously accomplished.

公开(公告)号：US3443176A

公开(公告)日：1969-05-06

申请号：US3443176D

申请日：1966-03-31

Applicant: IBM

Inventor： AGUSTA BENJAMIN ,  HESS MARTIN S

IPC: H01L21/316 ,  H01L21/74 ,  H01L21/761 ,  H01L21/82 ,  H01L23/535 ,  H01L27/07 ,  H01L11/10 ,  H01L15/00

CPC classification number: H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/74 ,  H01L21/761 ,  H01L21/82 ,  H01L23/535 ,  H01L27/0755 ,  H01L27/0761 ,  H01L2924/0002 ,  Y10S148/037 ,  Y10S148/049 ,  Y10S148/085 ,  Y10S148/151 ,  Y10S438/965 ,  H01L2924/00

公开(公告)号：CA891179A

公开(公告)日：1972-01-18

申请号：CA891179D

Applicant: IBM

Inventor： AGUSTA BENJAMIN ,  HESS MARTIN S

IPC: H01L21/316 ,  H01L21/74 ,  H01L21/761 ,  H01L21/82 ,  H01L23/535 ,  H01L27/07

公开(公告)号：GB1161351A

公开(公告)日：1969-08-13

申请号：GB1006867

申请日：1967-03-03

Applicant: IBM

Inventor： CASTRUCCI PAUL P ,  HESS MARTIN S ,  PECORARO RAYMOND P

IPC: H01L21/00 ,  H01L21/316 ,  H01L21/761 ,  H01L21/82 ,  H01L27/07

Abstract: 1,161,351. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 3 March, 1967 [31 March, 1966], No. 10068/67. Heading H1K. The carrier lifetime of a semi-conductor device is reduced by injecting carrier lifetime killers into the device in a non-oxidizing atmosphere after a final oxide layer has been formed on the surface. This is stated to prevent the formation of conductive " pipes " in the device. Semi-conductor devices are produced in P- type silicon slices by successively producing N + , N, P + , P and N-type regions by diffusion in a sealed capsule using silicon powder degenerately doped with arsenic as the source, by epitaxial growth, by diffusion of boron, by a second diffusion of boron, and by diffusion of phosphorus from a POCl 3 source respectively using oxide photo-masking techniques. The last diffusion is followed by an oxidation drivein, a window is opened in the lower face of the wafer, a layer of gold is evaporated on to the exposed surface, the wafer is heated in a nitrogen ambient to diffuse-in the gold, and the wafer is then annealed in a non-oxidizing atmosphere. In a second embodiment the N + , N, P + and P-type regions are formed as in the first embodiment, a portion of the oxide is removed and gold is diffused-in in an atmosphere of nitrogen or argon, and the final diffusion of N + type regions is performed in a non-oxidizing atmosphere without any intermediate or subsequent oxidizing step. Electrodes are produced by evaporation of aluminium. The oxide layers used as masks may be produced by heating in dry oxygen, followed by steam, by pyrolytic deposition, or by R.F. sputtering. The first mentioned N + type regions may be produced by etching a channel and epitaxially depositing N + type material. Some of the P + type regions may extend completely through the underlying N-type regions to provide isolation regions in an integrated circuit and this diffusion may also be used to form " underpass " connections.

公开(公告)号：CA859933A

公开(公告)日：1970-12-29

申请号：CA859933D

Applicant: IBM

Inventor： CASTRUCCI PAUL P ,  HESS MARTIN S ,  MAHERAS GEORGE ,  NORTH WILLIAM D ,  GROCHOWSKI EDWARD G

公开(公告)号：FR1552804A

公开(公告)日：1969-01-10

申请号：FR1552804D

申请日：1967-03-23

Applicant: IBM

Inventor： CASTRUCCI PAUL P ,  HESS MARTIN S ,  PECORARO RAYMOND P

IPC: G11C11/411 ,  H03K3/286 ,  H03K3/288

公开(公告)号：CA992668A

公开(公告)日：1976-07-06

申请号：CA84637

申请日：1970-06-04

Applicant: IBM

Inventor： AGUSTA BENJAMIN ,  DEWITT DAVID ,  HESS MARTIN S ,  PECORARO RAYMOND P

IPC: H01L21/761 ,  H01L21/8222 ,  H01L27/00 ,  H01L29/00 ,  H01L29/08

公开(公告)号：CA843642A

公开(公告)日：1970-06-02

申请号：CA843642D

Applicant: IBM

Inventor： CASTRUCCI PAUL P ,  HESS MARTIN S ,  PECORARO RAYMOND P

公开(公告)号：BE696052A

公开(公告)日：1967-09-01

申请号：BE696052D

申请日：1967-03-24

Applicant: IBM

Inventor： CASTRUCCI PAUL P ,  HESS MARTIN S ,  PECORARO RAYMOND P

IPC: G11C11/411 ,  H03K3/286 ,  H03K3/288