公开(公告)号：JP2008191656A

公开(公告)日：2008-08-21

申请号：JP2008001453

申请日：2008-01-08

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BRUNNER TIMOTHY A ,  HIBBS MICHAEL S

IPC: G03F1/14 ,  H01L21/027

CPC classification number: G03F1/62 ,  G03F7/11 ,  Y10T428/24

Abstract: PROBLEM TO BE SOLVED: To provide an optical pellicle to protect a photomask from particulate contamination during semiconductor lithography which has enhanced transparency and operational characteristics. SOLUTION: The pellicle utilizes alternating layers of a transparent polymer and a transparent inorganic layer to form pellicles which have high transmission properties and high strength. In a preferred pellicle, a three-layer pellicle is provided having a transparent inorganic layer 4 sandwiched between two polymer layers 12a and 12b. A five-layer pellicle is also provided with the outer layers and a middle layer being polymer layers and the inner layers an inorganic material. The preferred polymer layer is a perfluorinated polymer such as Teflon (R) and the preferred inorganic material is silicon dioxide. The pellicle of the invention provides light transmission of greater than 0.99% at incident light angles up to arcsine 0.45. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种光学防护薄膜，以保护光掩模免受半导体光刻期间的颗粒污染，这具有增强的透明度和操作特性。 解决方案：防护薄膜组件利用透明聚合物和透明无机层的交替层来形成具有高透射性和高强度的薄膜。 在优选的防护薄膜组件中，提供三层薄膜，其具有夹在两个聚合物层12a和12b之间的透明无机层4。 五层防护薄膜也设有外层，中间层是聚合物层，内层是无机材料。 优选的聚合物层是全氟化聚合物，例如Teflon，优选的无机材料是二氧化硅。 本发明的防护薄膜组件在入射光角直至反正弦0.45时提供大于0.99％的透光率。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JPH11327123A

公开(公告)日：1999-11-26

申请号：JP9829399

申请日：1999-04-06

Applicant: IBM

Inventor： HIBBS MICHAEL S ,  SON PON

IPC: H01L21/027 ,  G03F1/84 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To ensure a direct measurement of phase shift generating in a phase shift area of a phase shift mask by measuring a relative shift between interference patterns caused by a first slit pair having the same phase shift characteristic and a second slit pair having a different phase shift characteristic. SOLUTION: A mask 55 contains a reference slit pair, each of which has substantially the same phase characteristic. The mask 55 has also a measuring slit pair, each of which has a different phase shift characteristic. An objective lens projects Young's interference stripes generated by the slit pairs on a plane of a NA aperture 90. A people image lens 69 projects these stripes on a CCD camera 71. A phase difference between the two slits of the measuring slit pair by measuring a relative fringe shift between the measuring slit pair and the reference slit pair.

公开(公告)号：DE69840719D1

公开(公告)日：2009-05-20

申请号：DE69840719

申请日：1998-05-18

Applicant: IBM

Inventor： GRENON BRIAN J ,  HAIGHT RICHARD A ,  HAYDEN DENNIS M ,  HIBBS MICHAEL S ,  LEVIN PETER J ,  NEARY TIMOTHY E ,  ROCHEFORT RAYMOND A ,  SCHMIDT DENNIS A ,  SMOLINSKI JACEK G ,  WAGNER ALFRED

IPC: G03F1/00