PHASE SHIFTING MASK
    1.
    发明专利
    PHASE SHIFTING MASK 审中-公开

    公开(公告)号:JP2002318449A

    公开(公告)日:2002-10-31

    申请号:JP2002075527

    申请日:2002-03-19

    Applicant: IBM

    Inventor: SON PON

    Abstract: PROBLEM TO BE SOLVED: To provide an improved phase shifting mask used in lithographic processing of semiconductor substrates. SOLUTION: The phase shifting mask has a mask substrate substantially transparent to the energy beam used and a patterned phase shifting layer disposed on the mask substrate and having openings therein exposing the mask substrate. The patterned phase shifting layer is comprised of a material of differing composition than the mask substrate and is of thickness sufficient to shift the phase of an energy beam passing through the thickness of the phase shifting layer and the mask substrate by 180 deg., compared to the phase of the energy beam passing through the phase shifting layer openings and the mask substrate. Preferably the phase shifting material is a siliconoxynitride and the substrate is quartz. The mask also includes a patterned layer of a material substantially opaque to the energy beam disposed on the mask substrate or the phase shifting layer.

    PHASE MEASUREMENT USING AERIAL IMAGE MEASURING TOOL

    公开(公告)号:JPH11327123A

    公开(公告)日:1999-11-26

    申请号:JP9829399

    申请日:1999-04-06

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To ensure a direct measurement of phase shift generating in a phase shift area of a phase shift mask by measuring a relative shift between interference patterns caused by a first slit pair having the same phase shift characteristic and a second slit pair having a different phase shift characteristic. SOLUTION: A mask 55 contains a reference slit pair, each of which has substantially the same phase characteristic. The mask 55 has also a measuring slit pair, each of which has a different phase shift characteristic. An objective lens projects Young's interference stripes generated by the slit pairs on a plane of a NA aperture 90. A people image lens 69 projects these stripes on a CCD camera 71. A phase difference between the two slits of the measuring slit pair by measuring a relative fringe shift between the measuring slit pair and the reference slit pair.

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